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PDF MBR60030CT Data sheet ( Hoja de datos )
| Número de pieza | MBR60030CT | |
| Descripción | (MBR60020CT - MBR60040CTR) Schottky Power Diode | |
| Fabricantes | Naina Semiconductor | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de MBR60030CT (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
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Naina Semiconductor Ltd.
MBR60020CT thru
MBR60040CTR
Features
Silicon Schottky Diode, 600A
• Guard Ring Protection
• Low forward voltage drop
• High surge current capability
• Up to 100V VRRM
TWIN TOWER PACKAGE
Maximum Ratings (TJ = 25oC unless otherwise specified)
Parameter
Symbol
Conditions
MBR60020CT MBR60030CT
(R) (R)
Repetitive peak
reverse voltage
VRRM
20 30
RMS reverse voltage VRMS
14 21
DC blocking voltage VDC
20 30
Average forward
current
IF(AV)
TC ≤ 100 oC
600
600
Non-repetitive
forward surge
current, half sine-
wave
IFSM
TC = 25 oC
tp = 8.3 ms
4000
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4000
MBR60035CT
(R)
35
25
35
600
4000
MBR60040CT
(R)
40
28
40
600
4000
Units
V
V
V
A
A
Electrical Characteristics (TJ = 25oC unless otherwise specified)
Parameter
Symbol
Conditions
MBR60020CT
(R)
DC forward voltage
VF
IF = 300 A
TJ = 25 oC
0.75
VR = 20 V
DC reverse current
IR
TJ = 25 oC
VR = 20 V
TJ = 125oC
1
20
MBR60030CT
(R)
0.75
1
20
MBR60035CT
(R)
0.75
1
20
MBR60040CT
(R)
0.75
1
20
Units
V
mA
Thermal Characteristics (TJ = 25oC unless otherwise specified)
Parameter
Symbol
MBR60020CT
(R)
Thermal resistance
junction to case
RthJ-C
0.12
Operating, storage
temperature range
TJ , Tstg
- 40 to +165
MBR60030CT
(R)
0.12
- 40 to +165
MBR60035CT
(R)
0.12
- 40 to +165
MBR60040CT
(R)
0.12
- 40 to +165
Units
oC/W
oC
1 D-95, Sector 63, Noida – 201301, India • Tel: 0120-4205450 • Fax: 0120-4273653
[email protected] • www.nainasemi.com
datasheet pdf - http://www.DataSheet4U.net/
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet MBR60030CT.PDF ] | |
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