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MBR500100CTR fiches techniques PDF

Naina Semiconductor - (MBR50045CT - MBR500100CTR) Schottky Power Diode

Numéro de référence MBR500100CTR
Description (MBR50045CT - MBR500100CTR) Schottky Power Diode
Fabricant Naina Semiconductor 
Logo Naina Semiconductor 





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MBR500100CTR fiche technique
Naina Semiconductor Ltd.
MBR50045CT thru
MBR500100CTR
Features
Silicon Schottky Diode, 500A
Guard Ring Protection
Low forward voltage drop
High surge current capability
Up to 100V VRRM
TWIN TOWER PACKAGE
Maximum Ratings (TJ = 25oC unless otherwise specified)
Parameter
Symbol
Conditions
MBR50045CT MBR50060CT
(R) (R)
Repetitive peak
reverse voltage
VRRM
45 60
RMS reverse voltage VRMS
32 42
DC blocking voltage VDC
45 60
Average forward
current
IF(AV)
TC ≤ 100 oC
500
500
Non-repetitive
forward surge
current, half sine-
wave
IFSM
TC = 25 oC
tp = 8.3 ms
3500
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3500
MBR50080CT
(R)
80
56
80
500
3500
MBR500100C
T(R)
100
70
100
500
3500
Units
V
V
V
A
A
Electrical Characteristics (TJ = 25oC unless otherwise specified)
Parameter
Symbol
Conditions
MBR50045CT
(R)
DC forward voltage
VF
IF = 250 A
TJ = 25 oC
0.75
VR = 20 V
DC reverse current
IR
TJ = 25 oC
VR = 20 V
TJ = 125oC
1
20
MBR50060CT
(R)
0.85
1
20
MBR50080CT
(R)
0.88
1
20
MBR500100C
T(R)
0.88
1
20
Units
V
mA
Thermal Characteristics (TJ = 25oC unless otherwise specified)
Parameter
Symbol
MBR50045CT
(R)
Thermal resistance
junction to case
RthJ-C
0.12
Operating, storage
temperature range
TJ , Tstg
- 40 to +165
MBR50060CT
(R)
0.12
- 40 to +165
MBR50080CT
(R)
0.12
- 40 to +165
MBR500100C
T(R)
0.12
- 40 to +165
Units
oC/W
oC
1 D-95, Sector 63, Noida – 201301, India • Tel: 0120-4205450 • Fax: 0120-4273653
[email protected] • www.nainasemi.com
datasheet pdf - http://www.DataSheet4U.net/

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