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PDF MBR50040CT Data sheet ( Hoja de datos )
| Número de pieza | MBR50040CT | |
| Descripción | (MBR50020CT - MBR50040CTR) Schottky Power Diode | |
| Fabricantes | Naina Semiconductor | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de MBR50040CT (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
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Naina Semiconductor Ltd.
MBR50020CT thru
MBR50040CTR
Features
Silicon Schottky Diode, 500A
• Guard Ring Protection
• Low forward voltage drop
• High surge current capability
• Up to 100V VRRM
TWIN TOWER PACKAGE
Maximum Ratings (TJ = 25oC unless otherwise specified)
Parameter
Symbol
Conditions
MBR50020CT MBR50030CT
(R) (R)
Repetitive peak
reverse voltage
VRRM
20 30
RMS reverse voltage VRMS
14 21
DC blocking voltage VDC
20 30
Average forward
current
IF(AV)
TC ≤ 100 oC
500
500
Non-repetitive
forward surge
current, half sine-
wave
IFSM
TC = 25 oC
tp = 8.3 ms
3500
http://www.DataSheet4U.net/
3500
MBR50035CT
(R)
35
25
35
500
3500
MBR50040CT
(R)
40
28
40
500
3500
Units
V
V
V
A
A
Electrical Characteristics (TJ = 25oC unless otherwise specified)
Parameter
Symbol
Conditions
MBR50020CT
(R)
DC forward voltage
VF
IF = 250 A
TJ = 25 oC
0.75
VR = 20 V
DC reverse current
IR
TJ = 25 oC
VR = 20 V
TJ = 125oC
1
20
MBR50030CT
(R)
0.75
1
20
MBR50035CT
(R)
0.75
1
20
MBR50040CT
(R)
0.75
1
20
Units
V
mA
Thermal Characteristics (TJ = 25oC unless otherwise specified)
Parameter
Symbol
MBR50020CT
(R)
Thermal resistance
junction to case
RthJ-C
0.12
Operating, storage
temperature range
TJ , Tstg
- 40 to +165
MBR50030CT
(R)
0.12
- 40 to +165
MBR50035CT
(R)
0.12
- 40 to +165
MBR50040CT
(R)
0.12
- 40 to +165
Units
oC/W
oC
1 D-95, Sector 63, Noida – 201301, India • Tel: 0120-4205450 • Fax: 0120-4273653
[email protected] • www.nainasemi.com
datasheet pdf - http://www.DataSheet4U.net/
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet MBR50040CT.PDF ] | |
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