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PDF MBR300100CT Data sheet ( Hoja de datos )
| Número de pieza | MBR300100CT | |
| Descripción | (MBR30045CT - MBR300100CTR) Schottky Power Diode | |
| Fabricantes | Naina Semiconductor | |
| Logotipo |  |
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Naina Semiconductor Ltd.
MBR30045CT thru
MBR300100CTR
Features
Silicon Schottky Diode, 300A
• Guard Ring Protection
• Low forward voltage drop
• High surge current capability
• Up to 100V VRRM
TWIN TOWER PACKAGE
Maximum Ratings (TJ = 25oC unless otherwise specified)
Parameter
Symbol
Conditions
MBR30045CT MBR30060CT
(R) (R)
Repetitive peak
reverse voltage
VRRM
45 60
RMS reverse voltage VRMS
32 42
DC blocking voltage VDC
45 60
Average forward
current
IF(AV)
TC ≤ 140 oC
300
300
Non-repetitive
forward surge
current, half sine-
wave
IFSM
TC = 25 oC
tp = 8.3 ms
2500
http://www.DataSheet4U.net/
2500
MBR30080CT
(R)
80
56
80
300
2500
MBR300100C
T(R)
100
70
100
300
2500
Units
V
V
V
A
A
Electrical Characteristics (TJ = 25oC unless otherwise specified)
Parameter
Symbol
Conditions
MBR30045CT
(R)
DC forward voltage
VF
IF = 150 A
TJ = 25 oC
0.68
VR = 20 V
DC reverse current
IR
TJ = 25 oC
VR = 20 V
TJ = 125oC
8
200
MBR30060CT
(R)
0.76
8
200
MBR30080CT
(R)
0.88
8
200
MBR300100C
T(R)
0.88
8
200
Units
V
mA
Thermal Characteristics (TJ = 25oC unless otherwise specified)
Parameter
Symbol
MBR30045CT
(R)
Thermal resistance
junction to case
RthJ-C
0.4
Operating, storage
temperature range
TJ , Tstg
- 40 to +175
MBR30060CT
(R)
0.4
- 40 to +175
MBR30080CT
(R)
0.4
- 40 to +175
MBR300100C
T(R)
0.4
- 40 to +175
Units
oC/W
oC
1 D-95, Sector 63, Noida – 201301, India • Tel: 0120-4205450 • Fax: 0120-4273653
[email protected] • www.nainasemi.com
datasheet pdf - http://www.DataSheet4U.net/
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet MBR300100CT.PDF ] | |
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