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PDF MBR30035CTR Data sheet ( Hoja de datos )
| Número de pieza | MBR30035CTR | |
| Descripción | (MBR30020CT - MBR30040CTR) Schottky Power Diode | |
| Fabricantes | Naina Semiconductor | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de MBR30035CTR (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
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Naina Semiconductor Ltd.
MBR30020CT thru
MBR30040CTR
Features
Silicon Schottky Diode, 300A
• Guard Ring Protection
• Low forward voltage drop
• High surge current capability
• Up to 100V VRRM
TWIN TOWER PACKAGE
Maximum Ratings (TJ = 25oC unless otherwise specified)
Parameter
Symbol
Conditions
MBR30020CT MBR30030CT
(R) (R)
Repetitive peak
reverse voltage
VRRM
20 30
RMS reverse voltage VRMS
14 21
DC blocking voltage VDC
20 30
Average forward
current
IF(AV)
TC ≤ 140 oC
300
300
Non-repetitive
forward surge
current, half sine-
wave
IFSM
TC = 25 oC
tp = 8.3 ms
2500
http://www.DataSheet4U.net/
2500
MBR30035CT
(R)
35
25
35
300
2500
MBR30040CT
(R)
40
28
40
300
2500
Units
V
V
V
A
A
Electrical Characteristics (TJ = 25oC unless otherwise specified)
Parameter
Symbol
Conditions
MBR30020CT
(R)
DC forward voltage
VF
IF = 150 A
TJ = 25 oC
0.68
VR = 20 V
DC reverse current
IR
TJ = 25 oC
VR = 20 V
TJ = 125oC
8
200
MBR30030CT
(R)
0.68
8
200
MBR30035CT
(R)
0.68
8
200
MBR30040CT
(R)
0.68
8
200
Units
V
mA
Thermal Characteristics (TJ = 25oC unless otherwise specified)
Parameter
Symbol
MBR30020CT
(R)
Thermal resistance
junction to case
RthJ-C
0.4
Operating, storage
temperature range
TJ , Tstg
- 40 to +175
MBR30030CT
(R)
0.4
- 40 to +175
MBR30035CT
(R)
0.4
- 40 to +175
MBR30040CT
(R)
0.4
- 40 to +175
Units
oC/W
oC
1 D-95, Sector 63, Noida – 201301, India • Tel: 0120-4205450 • Fax: 0120-4273653
[email protected] • www.nainasemi.com
datasheet pdf - http://www.DataSheet4U.net/
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet MBR30035CTR.PDF ] | |
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