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PDF MBR200100CTR Data sheet ( Hoja de datos )
| Número de pieza | MBR200100CTR | |
| Descripción | (MBR20045CT - MBR200100CTR) Schottky Power Diode | |
| Fabricantes | Naina Semiconductor | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de MBR200100CTR (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
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Naina Semiconductor Ltd.
MBR20045CT thru
MBR200100CTR
Features
Silicon Schottky Diode, 200A
• Guard Ring Protection
• Low forward voltage drop
• High surge current capability
• Up to 100V VRRM
TWIN TOWER PACKAGE
Maximum Ratings (TJ = 25oC unless otherwise specified)
Parameter
Symbol
Conditions
MBR20045CT MBR20060CT
(R) (R)
Repetitive peak
reverse voltage
VRRM
45 60
RMS reverse voltage VRMS
32 42
DC blocking voltage VDC
45 60
Average forward
current
IF(AV)
TC ≤ 135 oC
200
200
Non-repetitive
forward surge
current, half sine-
wave
IFSM
TC = 25 oC
tp = 8.3 ms
1500
http://www.DataSheet4U.net/
1500
MBR20080CT
(R)
80
56
80
200
1500
MBR200100C
T(R)
100
70
100
200
1500
Units
V
V
V
A
A
Electrical Characteristics (TJ = 25oC unless otherwise specified)
Parameter
Symbol
Conditions
MBR20045CT
(R)
DC forward voltage
VF
IF = 100 A
TJ = 25 oC
0.68
VR = 20 V
DC reverse current
IR
TJ = 25 oC
VR = 20 V
TJ = 125oC
5
200
MBR20060CT
(R)
0.76
5
200
MBR20080CT
(R)
0.88
5
200
MBR200100C
T(R)
0.88
5
200
Units
V
mA
Thermal Characteristics (TJ = 25oC unless otherwise specified)
Parameter
Symbol
MBR20045CT
(R)
Thermal resistance
junction to case
RthJ-C
0.5
Operating, storage
temperature range
TJ , Tstg
- 40 to +175
MBR20060CT
(R)
0.5
- 40 to +175
MBR20080CT
(R)
0.5
- 40 to +175
MBR200100C
T(R)
0.5
- 40 to +175
Units
oC/W
oC
1 D-95, Sector 63, Noida – 201301, India • Tel: 0120-4205450 • Fax: 0120-4273653
[email protected] • www.nainasemi.com
datasheet pdf - http://www.DataSheet4U.net/
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet MBR200100CTR.PDF ] | |
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