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PDF MBR20020CT Data sheet ( Hoja de datos )
| Número de pieza | MBR20020CT | |
| Descripción | (MBR20020CT - MBR20040CTR) Schottky Power Diode | |
| Fabricantes | Naina Semiconductor | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de MBR20020CT (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
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Naina Semiconductor Ltd.
MBR20020CT thru
MBR20040CTR
Features
Silicon Schottky Diode, 200A
• Guard Ring Protection
• Low forward voltage drop
• High surge current capability
• Up to 100V VRRM
TWIN TOWER PACKAGE
Maximum Ratings (TJ = 25oC unless otherwise specified)
Parameter
Symbol
Conditions
MBR20020CT MBR20030CT
(R) (R)
Repetitive peak
reverse voltage
VRRM
20 30
RMS reverse voltage VRMS
14 21
DC blocking voltage VDC
20 30
Average forward
current
IF(AV)
TC ≤ 135 oC
200
200
Non-repetitive
forward surge
current, half sine-
wave
IFSM
TC = 25 oC
tp = 8.3 ms
1500
http://www.DataSheet4U.net/
1500
MBR20035CT
(R)
35
25
35
200
1500
MBR20040CT
(R)
40
28
40
200
1500
Units
V
V
V
A
A
Electrical Characteristics (TJ = 25oC unless otherwise specified)
Parameter
Symbol
Conditions
MBR20020CT
(R)
DC forward voltage
VF
IF = 100 A
TJ = 25 oC
0.68
VR = 20 V
DC reverse current
IR
TJ = 25 oC
VR = 20 V
TJ = 125oC
5
200
MBR20030CT
(R)
0.68
5
200
MBR20035CT
(R)
0.68
5
200
MBR20040CT
(R)
0.68
5
200
Units
V
mA
Thermal Characteristics (TJ = 25oC unless otherwise specified)
Parameter
Symbol
MBR20020CT
(R)
Thermal resistance
junction to case
RthJ-C
0.5
Operating, storage
temperature range
TJ , Tstg
- 40 to +175
MBR20030CT
(R)
0.5
- 40 to +175
MBR20035CT
(R)
0.5
- 40 to +175
MBR20040CT
(R)
0.5
- 40 to +175
Units
oC/W
oC
1 D-95, Sector 63, Noida – 201301, India • Tel: 0120-4205450 • Fax: 0120-4273653
[email protected] • www.nainasemi.com
datasheet pdf - http://www.DataSheet4U.net/
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet MBR20020CT.PDF ] | |
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