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MBR12060CT fiches techniques PDF

Naina Semiconductor - (MBR12045CT - MBR120100CTR) Schottky Power Diode

Numéro de référence MBR12060CT
Description (MBR12045CT - MBR120100CTR) Schottky Power Diode
Fabricant Naina Semiconductor 
Logo Naina Semiconductor 





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MBR12060CT fiche technique
Naina Semiconductor Ltd.
MBR12045CT thru
MBR120100CTR
Features
Silicon Schottky Diode, 120A
Guard Ring Protection
Low forward voltage drop
High surge current capability
Up to 100V VRRM
TWIN TOWER PACKAGE
Maximum Ratings (TJ = 25oC unless otherwise specified)
Parameter
Symbol
Conditions
MBR12045CT MBR12060CT
(R) (R)
Repetitive peak
reverse voltage
VRRM
45 60
RMS reverse voltage VRMS
32 42
DC blocking voltage VDC
45 60
Average forward
current
IF(AV)
TC ≤ 140 oC
120
120
Non-repetitive
forward surge
current, half sine-
wave
IFSM
TC = 25 oC
tp = 8.3 ms
800
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800
MBR12080CT
(R)
80
56
80
120
800
MBR120100C
T(R)
100
70
100
120
800
Units
V
V
V
A
A
Electrical Characteristics (TJ = 25oC unless otherwise specified)
Parameter
Symbol
Conditions
MBR12045CT
(R)
DC forward voltage
VF
IF = 60 A
TJ = 25 oC
0.68
VR = 20 V
DC reverse current
IR
TJ = 25 oC
VR = 20 V
TJ = 125oC
3
200
MBR12060CT
(R)
0.75
3
200
MBR12080CT
(R)
0.86
3
200
MBR120100C
T(R)
0.86
3
200
Units
V
mA
Thermal Characteristics (TJ = 25oC unless otherwise specified)
Parameter
Symbol
MBR12045CT
(R)
Thermal resistance
junction to case
RthJ-C
0.8
Operating, storage
temperature range
TJ , Tstg
- 40 to +175
MBR12060CT
(R)
0.8
- 40 to +175
MBR12080CT
(R)
0.8
- 40 to +175
MBR120100C
T(R)
0.8
- 40 to +175
Units
oC/W
oC
1 D-95, Sector 63, Noida – 201301, India • Tel: 0120-4205450 • Fax: 0120-4273653
[email protected] • www.nainasemi.com
datasheet pdf - http://www.DataSheet4U.net/

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