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PDF MBR12045CT Data sheet ( Hoja de datos )
| Número de pieza | MBR12045CT | |
| Descripción | (MBR12045CT - MBR120100CTR) Schottky Power Diode | |
| Fabricantes | Naina Semiconductor | |
| Logotipo |  |
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Naina Semiconductor Ltd.
MBR12045CT thru
MBR120100CTR
Features
Silicon Schottky Diode, 120A
• Guard Ring Protection
• Low forward voltage drop
• High surge current capability
• Up to 100V VRRM
TWIN TOWER PACKAGE
Maximum Ratings (TJ = 25oC unless otherwise specified)
Parameter
Symbol
Conditions
MBR12045CT MBR12060CT
(R) (R)
Repetitive peak
reverse voltage
VRRM
45 60
RMS reverse voltage VRMS
32 42
DC blocking voltage VDC
45 60
Average forward
current
IF(AV)
TC ≤ 140 oC
120
120
Non-repetitive
forward surge
current, half sine-
wave
IFSM
TC = 25 oC
tp = 8.3 ms
800
http://www.DataSheet4U.net/
800
MBR12080CT
(R)
80
56
80
120
800
MBR120100C
T(R)
100
70
100
120
800
Units
V
V
V
A
A
Electrical Characteristics (TJ = 25oC unless otherwise specified)
Parameter
Symbol
Conditions
MBR12045CT
(R)
DC forward voltage
VF
IF = 60 A
TJ = 25 oC
0.68
VR = 20 V
DC reverse current
IR
TJ = 25 oC
VR = 20 V
TJ = 125oC
3
200
MBR12060CT
(R)
0.75
3
200
MBR12080CT
(R)
0.86
3
200
MBR120100C
T(R)
0.86
3
200
Units
V
mA
Thermal Characteristics (TJ = 25oC unless otherwise specified)
Parameter
Symbol
MBR12045CT
(R)
Thermal resistance
junction to case
RthJ-C
0.8
Operating, storage
temperature range
TJ , Tstg
- 40 to +175
MBR12060CT
(R)
0.8
- 40 to +175
MBR12080CT
(R)
0.8
- 40 to +175
MBR120100C
T(R)
0.8
- 40 to +175
Units
oC/W
oC
1 D-95, Sector 63, Noida – 201301, India • Tel: 0120-4205450 • Fax: 0120-4273653
[email protected] • www.nainasemi.com
datasheet pdf - http://www.DataSheet4U.net/
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet MBR12045CT.PDF ] | |
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