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PDF MBR12040CTR Data sheet ( Hoja de datos )
| Número de pieza | MBR12040CTR | |
| Descripción | (MBR12020CT - MBR12040CTR) Schottky Power Diode | |
| Fabricantes | Naina Semiconductor | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de MBR12040CTR (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
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Naina Semiconductor Ltd.
MBR12020CT thru
MBR12040CTR
Features
Silicon Schottky Diode, 120A
• Guard Ring Protection
• Low forward voltage drop
• High surge current capability
• Up to 100V VRRM
TWIN TOWER PACKAGE
Maximum Ratings (TJ = 25oC unless otherwise specified)
Parameter
Symbol
Conditions
MBR12020CT MBR12030CT
(R) (R)
Repetitive peak
reverse voltage
VRRM
20 30
RMS reverse voltage VRMS
14 21
DC blocking voltage VDC
20 30
Average forward
current
IF(AV)
TC ≤ 140 oC
120
120
Non-repetitive
forward surge
current, half sine-
wave
IFSM
TC = 25 oC
tp = 8.3 ms
800
http://www.DataSheet4U.net/
800
MBR12035CT
(R)
35
25
35
120
800
MBR12040CT
(R)
40
28
40
120
800
Units
V
V
V
A
A
Electrical Characteristics (TJ = 25oC unless otherwise specified)
Parameter
Symbol
Conditions
MBR12020CT
(R)
DC forward voltage
VF
IF = 60 A
TJ = 25 oC
0.68
VR = 20 V
DC reverse current
IR
TJ = 25 oC
VR = 20 V
TJ = 125oC
3
200
MBR12030CT
(R)
0.68
3
200
MBR12035CT
(R)
0.68
3
200
MBR12040CT
(R)
0.68
3
200
Units
V
mA
Thermal Characteristics (TJ = 25oC unless otherwise specified)
Parameter
Symbol
MBR12020CT
(R)
Thermal resistance
junction to case
RthJ-C
0.8
Operating, storage
temperature range
TJ , Tstg
- 40 to +175
MBR12030CT
(R)
0.8
- 40 to +175
MBR12035CT
(R)
0.8
- 40 to +175
MBR12040CT
(R)
0.8
- 40 to +175
Units
oC/W
oC
1 D-95, Sector 63, Noida – 201301, India • Tel: 0120-4205450 • Fax: 0120-4273653
[email protected] • www.nainasemi.com
datasheet pdf - http://www.DataSheet4U.net/
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet MBR12040CTR.PDF ] | |
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