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PDF MBR3520R Data sheet ( Hoja de datos )

Número de pieza MBR3520R
Descripción (MBR3520 - MBR3540R) Schottky Power Diode
Fabricantes Naina Semiconductor 
Logotipo Naina Semiconductor Logotipo



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No Preview Available ! MBR3520R Hoja de datos, Descripción, Manual

Naina Semiconductor Ltd.
MBR3520 thru
MBR3540R
Features
Fast Switching
Low forward voltage drop
High surge capability
High efficiency, low power loss
Normal and Reverse polarity
Schottky Power Diode, 35A
DO-203AA (DO-4)
Maximum Ratings (TJ = 25oC, unless otherwise noted)
Parameter
Test
Conditions
Symbol
Repetitive peak reverse voltage
VRRM
RMS reverse voltage
VRMS
DC blocking voltage
Continuous forward current
TC ≤ 110oC
VDC
IF
Surge non-repetitive forward
current, half-sine wave
TC = 25oC
IFSM
Forward voltage
Reverse current
IF = 35 A
TJ = 25oC
VR = 20V,
TJ = 25oC
VR = 20V,
TJ = 125oC
VF
IR
MBR3520(R)
20
14
20
35
600
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0.68
1.5
25
MBR3530(R)
30
21
30
35
600
0.68
1.5
25
MBR3535(R)
35
25
35
35
600
0.68
1.5
25
MBR3540(R)
40
28
40
35
600
0.68
1.5
25
Units
V
V
V
A
A
V
mA
Thermal & Mechanical Specifications (TJ = 25oC, unless otherwise noted)
Parameters
Symbol MBR3520(R) MBR3530(R) MBR3535(R)
Maximum thermal resistance, junction to
case
Rth(JC)
1.5
Operating junction temperature range
Storage temperature
TJ
Tstg
-55 to 150
-55 to 175
Mounting torque (non-lubricated threads)
F
2.0
Approximate allowable weight
W
5.0
MBR3540(R)
Units
oC/W
oC
oC
Nm
g
1 D-95, Sector 63, Noida – 201301, India • Tel: 0120-4205450 • Fax: 0120-4273653
[email protected] • www.nainasemi.com
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