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PDF 2N6727 Data sheet ( Hoja de datos )
| Número de pieza | 2N6727 | |
| Descripción | PNP SILICON PLANAR MEDIUM POWER TRANSISTORS | |
| Fabricantes | Zetex Semiconductors | |
| Logotipo |  |
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PNP SILICON PLANAR
MEDIUM POWER TRANSISTORS
ISSUE 1 MARCH 94
FEATURES
* 40 Volt VCEO
* Gain of 50 at IC = 1 Amp
* Ptot=1 Watt
2N6726
2N6727
C
B
E
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Power Dissipation at Tamb= 25°C
Operating and Storage Temperature Range
SYMBOL
VCBO
VCEO
VEBO
ICM
IC
Ptot
Tj:Tstg
E-Line
TO92 Compatible
2N6726 2N6727
-40 -50
-30 -40
-5
-2
-1
1
-55 to +200
UNIT
V
V
V
A
A
W
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL
2N6726
2N6727 UNIT CONDITIONS.
MIN. MAX. MIN. MAX.
Collector-Base
V(BR)CBO -40
-50
V IC=-1mA, IE=0
Breakdown Voltage
Collector-Emitter
V(BR)CEO -30
-40
V IC=-10mA, IB=0*
Breakdown Voltage
Emitter-Base
V(BR)EBO -5
-5
V IE=-1mA, IC=0
Breakdown Voltage
Collector Cut-Off
Current
Emitter Cut-Off
Current
ICBO
IEBO
-0.1 µA VCB=-40V, IE=0
-0.1 µA
VCB=-50V, IE=0
-0.1
-0.1 µA
VEB=-5V, IC=0
Collector-Emitter
Saturation Voltage
VCE(sat)
-0.5
-0.5 V
IC=-1A, IB=-100mA*
Base-Emitter Turn-On VBE(on)
Voltage
-1.2
-1.2 V
IC=-1A, VCE=-1V*
Static Forward
hFE
Current Transfer Ratio
Transition
Frequency
fT
55 55
60 60
50 250 50 250
IC=-10mA, VCE=-1V*
IC=-100mA, VCE=-1V*
IC=-1A, VCE=-1V*
50 500 50 500 MHz IC=-50mA, VCE=-10V
Collector Base
Capacitance
CCB
30 30 pF VCE=-10V, f=1MHz
3-8
1 page | ||
| Páginas | Total 1 Páginas | |
| PDF Descargar | [ Datasheet 2N6727.PDF ] | |
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