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PDF 2N6724 Data sheet ( Hoja de datos )
| Número de pieza | 2N6724 | |
| Descripción | NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTORS | |
| Fabricantes | Zetex Semiconductors | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de 2N6724 (archivo pdf) en la parte inferior de esta página. Total 1 Páginas | ||
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NPN SILICON PLANAR MEDIUM POWER
DARLINGTON TRANSISTORS
ISSUE 1 MARCH 94
FEATURES
* 50 Volt VCEO
* Gain of 15k at IC = 0.5 Amp
* Ptot=1 Watt
2N6724
2N6725
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Power Dissipation at Tamb= 25°C
Operating and Storage Temperature Range
SYMBOL
VCBO
VCEO
VEBO
ICM
IC
Ptot
Tj:Tstg
C
B
E
E-Line
TO92 Compatible
2N6724 2N6725
50 60
40 50
10
2
1
1
-55 to +200
UNIT
V
V
V
A
A
W
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL
2N6724
2N6725 UNIT CONDITIONS.
MIN. MAX. MIN. MAX.
Collector-Base
V(BR)CBO 50
60
V IC=1µA, IE=0
Breakdown Voltage
Collector-Emitter
V(BR)CEO 40
50
V IC=1mA, IB=0*
Breakdown Voltage
Emitter-Base
V(BR)EBO 10
10
V IE=10µA, IC=0
Breakdown Voltage
Collector Cut-Off
Current
Emitter Cut-Off
Current
ICBO
IEBO
1.0 µA VCB=30V, IE=0
1.0 µA VCB=40V, IE=0
0.1 0.1 µA VEB=8V, IC=0
Collector-Emitter
VCE(sat)
1.0
1.0 V
IC=200mA, IB=2mA*
Saturation Voltage
1.5
1.5 V
IC=1A, IB=2mA*
Base-Emitter
VBE(sat)
2.0
2.0 V
IC=1A, IB=2mA*
Saturation Voltage
Base-Emitter
VBE(on)
2.0
2.0 V
IC=1A, VCE=5V*
Turn-On Voltage
Static Forward
Current Transfer
Ratio
Collector Base
Capacitance
hFE
CCB
25K 25K
15K 15K
4K 40K 4K 40K
10 10 pF
IC=200mA, VCE=5V*
IC=500mA, VCE=5V*
IC=1A, VCE=5V*
VCB=10V, f=1MHz
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%
3-7
1 page | ||
| Páginas | Total 1 Páginas | |
| PDF Descargar | [ Datasheet 2N6724.PDF ] | |
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