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PDF K3430 Data sheet ( Hoja de datos )

Número de pieza K3430
Descripción MOSFET ( Transistor ) - 2SK3430
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No Preview Available ! K3430 Hoja de datos, Descripción, Manual

PRELIMINARY DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3430
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
The 2SK3430 is N-channel MOS Field Effect Transistor
designed for high current switching applications.
FEATURES
• Super low on-state resistance:
5 RDS(on)1 = 7.3 mΩ MAX. (VGS = 10 V, ID = 40 A)
5 RDS(on)2 = 15 mΩ MAX. (VGS = 4 V, ID = 40 A)
5 • Low Ciss: Ciss = 2800 pF TYP.
• Built-in gate protection diode
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK3430
2SK3430-S
TO-220AB
TO-262
2SK3430-Z
TO-220SMD
(TO-220AB)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage
VDSS
Gate to Source Voltage
VGSS
Drain Current (DC)
Drain Current (pulse) Note1
ID(DC)
ID(pulse)
Total Power Dissipation (TC = 25°C)
PT
40
±20
±80
±200
http://www.DataSheet4U.net/
84
Total Power Dissipation (TA = 25°C) PT 1.5
Channel Temperature
Tch 150
Storage Temperature
5 Single Avalanche Current Note2
5 Single Avalanche Energy Note2
Tstg –55 to +150
IAS 37
EAS 137
Notes 1. PW ≤ 10 µ s, Duty cycle ≤ 1 %
2. Starting Tch = 25 °C, RG = 25 Ω, VGS = 20 V → 0 V
V
V
A
A
W
W
°C
°C
A
mJ
(TO-262)
(TO-220SMD)
THERMAL RESISTANCE
Channel to Case
Channel to Ambient
Rth(ch-C)
Rth(ch-A)
1.49
83.3
°C/W
°C/W
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D14599EJ1V0DS00 (1st edition)
Date Published March 2000 NS CP(K)
Printed in Japan
The mark 5 shows major revised points.
©
1999,2000
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