|
|
Numéro de référence | HXS20-NP | ||
Description | Current Transducer | ||
Fabricant | LEM | ||
Logo | |||
1 Page
Current Transducer HXS 20-NP
For the electronic measurement of currents : DC, AC, pulsed, mixed,
with a galvanic isolation between the primary circuit (high power)
and the secondary circuit (electronic circuit).
IPN = 5 - 10 - 20 A
Electrical data
All Data are given with a RL = 10 kΩ
IPN
I
P
VOUT
VREF
R
L
ROUT
C
L
VC
I
C
Primary nominal rms current
Primary current measuring range
Output voltage (Analog) @ IP
I =0
P
Reference voltage 1) - Output voltage
Load resistance
V Output impedance
REF
VREF Load impedance
Output internal resistance
Capacitive loading
Supply voltage (± 5 %)
Current consumption @ V = 5 V
C
± 20
A
± 60
A
VREF ±(0.625·IP/IPN) V
V ± 0.0125 V
REF
2.5 ± 0.025
V
typ. 200
Ω
≥ 200
kΩ
≥ 2 kΩ
< 10
Ω
< 1 µF
5V
22 mA
Accuracy - Dynamic performance data
εX Accuracy 2) @ IPN , TA = 25°C
L Linearity error 0 .. IPN
.. 3 x IPN
TCVOUT Temperature coefficient of VOUT @ IP = 0
TCVREF Temperature coefficient of VREF
TCVOUT / VREF Temperature coefficient of VOUT / VREF @ IP = 0
TCG Temperature coefficient of G
VOM
tra
t
r
di/dt
Magnetic offset voltage @ IP = 0,
after an overload of 3 x I
PN
Reaction time @ 10 % of IPN
Response time @ 90 % of I
PN
di/dt accurately followed
V Output noise voltage (DC ..10 kHz)
NO
(DC .. 1 MHz)
f Frequency bandwidth (-3 dB) 3)
≤ ±http://www.DataSheet4U.net/
1
≤ ± 0.5
≤±1
≤ ± 0.4
% of IPN
% of IPN
% of IPN
mV/K
≤ ± 0.01
%/K
≤ ± 0.2
mV/K
≤ ± 0.05% of reading/K
< ± 0.7
<3
<5
> 50
< 20
< 40
DC .. 50
% of I
PN
µs
µs
A/µs
mVpp
mVpp
kHz
General data
TA Ambient operating temperature
TS Ambient storage temperature
m Mass
Standards
- 40 .. + 85
°C
- 40 .. + 85
°C
10 g
EN 50178 (97-10-01)
Features
• Hall effect measuring principle
• Multirange current transducer
through PCB pattern lay-out
• Galvanic isolation between primary
and secondary circuit
• Isolation test voltage 3500V
• Low power consumption
• Extremely low profile, < 11mm
• Single power supply +5V
• Fixed offset & gain
• Insulated plastic case recognized
according to UL 94-V0.
Advantages
• Small size and space saving
• Only one design for wide current
ratings range
• High immunity to external
interference.
• Internal & external reference
Applications
• AC variable speed drives
• Static converters for DC motor drives
• Battery supplied applications
• Uninterruptible Power Supplies
(UPS)
• Switched Mode Power Supplies
(SMPS)
• Power supplies for welding
applications.
Notes : 1) It is possible to overdrive VREF with an external reference voltage
between 2 - 2.8 V providing its ability to sink or source approximately
2.5 mA.
2) Excluding offset and hysteresis.
3) Small signal only to avoid excessive heatings of the magnetic core.
Application Domain
• Industrial
0 6 1 0 0 4 / 11
LEM reserves the right to carry out modifications on its transducers, in order to improve them, without prior notice.
Page 1/3
www.lem.com
datasheet pdf - http://www.DataSheet4U.net/
|
|||
Pages | Pages 3 | ||
Télécharger | [ HXS20-NP ] |
No | Description détaillée | Fabricant |
HXS20-NP | Current Transducer | LEM |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
www.DataSheetWiki.com | 2020 | Contactez-nous | Recherche |