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PDF 2N6667 Data sheet ( Hoja de datos )
| Número de pieza | 2N6667 | |
| Descripción | DARLINGTON POWER TRANSISTORS(PNP SILICON ) | |
| Fabricantes | ON Semiconductor | |
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2N6667, 2N6668
Darlington Silicon
Power Transistors
Designed for general−purpose amplifier and low speed switching
applications.
• High DC Current Gain −
hFE = 3500 (Typ) @ IC = 4.0 Adc
• Collector−Emitter Sustaining Voltage − @ 200 mAdc
VCEO(sus) = 60 Vdc (Min) − 2N6667
= 80 Vdc (Min) − 2N6668
• Low Collector−Emitter Saturation Voltage −
VCE(sat) = 2.0 Vdc (Max)@ IC = 5.0 Adc
• Monolithic Construction with Built−In Base−Emitter Shunt Resistors
• TO−220AB Compact Package
• Complementary to 2N6387, 2N6388
• Pb−Free Packages are Available*
http://onsemi.com
PNP SILICON
DARLINGTON
POWER TRANSISTORS
10 A, 60−80 V, 65 W
MARKING
DIAGRAM
4
COLLECTOR
BASE
≈ 8 k ≈ 120
EMITTER
Figure 1. Darlington Schematic
1
2
3
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
CASE 221A−09
TO−220AB
2N666x
AYWWG
x = 7 or 8
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
ORDERING INFORMATION
Device
Package
Shipping
2N6667
TO−220AB
50 Units/Rail
2N6667G
TO−220AB
(Pb−Free)
50 Units/Rail
2N6668
TO−220AB
50 Units/Rail
2N6668G
TO−220AB
(Pb−Free)
50 Units/Rail
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2005
June, 2005 − Rev. 5
1
Publication Order Number:
2N6667/D
1 page  
2N6667, 2N6668
3
2.5 TJ = 25°C
2
1.5 VBE(sat) @ IC/IB = 250
1
0.5
0.1
VBE @ VCE = 3 V
VCE(sat) @ IC/IB = 250
0.2 0.3 0.5 0.7 1
2 3 5 7 10
IC, COLLECTOR CURRENT (AMPS)
Figure 11. Typical “On” Voltages
+5
+4
+3
*IC/IB ≤
hFE @ VCE + 3.0 V
3
+2
25°C to 150°C
+1 −55 °C to 25°C
0
−1
∗θVC for VCE(sat)
−2
−3 θVB for VBE
25°C to 150°C
−4
−55 °C to 25°C
−5
0.1 0.2 0.3 0.5 0.7 1
23 5 7
IC, COLLECTOR CURRENT (AMP)
10
Figure 12. Typical Temperature Coefficients
105
REVERSE
FORWARD
104
103 VCE = 30 V
102
101
100
10− 1
+0.6
TJ = 150°C
100°C
25°C
+0.4 +0.2 0 −0.2 −0.4 −0.6 −0.8 −1 −1.2 −1.4
VBE, BASE−EMITTER VOLTAGE (VOLTS)
Figure 13. Typical Collector Cut−Off Region
http://onsemi.com
5
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet 2N6667.PDF ] | |
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