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PDF 2N6661 Data sheet ( Hoja de datos )
| Número de pieza | 2N6661 | |
| Descripción | TMOS SWITCHING FET TRANSISTORS | |
| Fabricantes | Motorola Inc | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de 2N6661 (archivo pdf) en la parte inferior de esta página. Total 4 Páginas | ||
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2N6659 MPF6659
2N6660 MPF6660
2N6661 MPF6661
N-CHANNEL ENHANCEMENT-MODE
TMOS POWER FIELD-EFFECT TRANSISTOR
These TMOS Power FETs are designed. for high-current, high-
speed power switching applications such as switching power sup-
plies, ,CMOS logic, microprocessor or ~L-to-tiigh current .,inter-
face and line drivers.
,,,.
0 Fast Switching Speed — ton = toff = 5.0 ns Max
0 LOW an-Resistance
— 1.5 Ohm Typ — 2N66591MPF6659
2.0 Ohm Typ — 2N6660/2N6661
— MPF6660/MPF6661
o Low Drive Requirement, VGS(th) = 2.0 V Max
e Inherent Current Sharing Capability Permits Easy Paralleling of
Many Devices
q
CASE79-02
TO-205AD
(TO-391
q
Drain Curre@~~J-’
Continu*s (~)w
Puls\@*2F’:*$
,,:*,::,,”,...,.,,
“$,~<~$‘:ii,:t,4~?>.<,.
,*:,,~,....;.,.8.
ID
IDM
2N6659
2N6660
2N6661
2.0
3.0
MPF6659
MPF6660
MPF6661
Adc
Total Power Dissipation
@ TC = 25°C
Derate above 25°C
pD
6.25
50
2.5 Watts
20 mWPC
Total Power Dissipation
@ TA = 25°C
Derate above 25°C
pD
—
—
1.0 Watis
8.0 mWPC
Operating and Storage
Temperature Range
I ITJJ Tstg
–55to +150
I“c
1
(1) The Power Dissipation of the psckaga mav result in a lower continuous drain current.
(2) Pulse Width ~ 300 x OutV Cvcles 2.0%
MPF6659
~~~MPF6660
MPF6661
CASE 29-03
TO-226AE
~OS ia a trademark of Motorola inc.
@ MOTOROW INC.,19a3
DS482C
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet 2N6661.PDF ] | |
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