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Numéro de référence | 2N6659 | ||
Description | TMOS SWITCHING FET TRANSISTORS | ||
Fabricant | Motorola Inc | ||
Logo | |||
1 Page
2N6659 MPF6659
2N6660 MPF6660
2N6661 MPF6661
N-CHANNEL ENHANCEMENT-MODE
TMOS POWER FIELD-EFFECT TRANSISTOR
These TMOS Power FETs are designed. for high-current, high-
speed power switching applications such as switching power sup-
plies, ,CMOS logic, microprocessor or ~L-to-tiigh current .,inter-
face and line drivers.
,,,.
0 Fast Switching Speed — ton = toff = 5.0 ns Max
0 LOW an-Resistance
— 1.5 Ohm Typ — 2N66591MPF6659
2.0 Ohm Typ — 2N6660/2N6661
— MPF6660/MPF6661
o Low Drive Requirement, VGS(th) = 2.0 V Max
e Inherent Current Sharing Capability Permits Easy Paralleling of
Many Devices
q
CASE79-02
TO-205AD
(TO-391
q
Drain Curre@~~J-’
Continu*s (~)w
Puls\@*2F’:*$
,,:*,::,,”,...,.,,
“$,~<~$‘:ii,:t,4~?>.<,.
,*:,,~,....;.,.8.
ID
IDM
2N6659
2N6660
2N6661
2.0
3.0
MPF6659
MPF6660
MPF6661
Adc
Total Power Dissipation
@ TC = 25°C
Derate above 25°C
pD
6.25
50
2.5 Watts
20 mWPC
Total Power Dissipation
@ TA = 25°C
Derate above 25°C
pD
—
—
1.0 Watis
8.0 mWPC
Operating and Storage
Temperature Range
I ITJJ Tstg
–55to +150
I“c
1
(1) The Power Dissipation of the psckaga mav result in a lower continuous drain current.
(2) Pulse Width ~ 300 x OutV Cvcles 2.0%
MPF6659
~~~MPF6660
MPF6661
CASE 29-03
TO-226AE
~OS ia a trademark of Motorola inc.
@ MOTOROW INC.,19a3
DS482C
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Pages | Pages 4 | ||
Télécharger | [ 2N6659 ] |
No | Description détaillée | Fabricant |
2N6650 | POWER TRANSISTORS(10A/100W) | Mospec Semiconductor |
2N6650 | (2N6648 - 2N6650) PNP DARLINGTON POWER SILICON TRANSISTOR | Microsemi Corporation |
2N6650 | Trans Darlington PNP 80V 10A 3-Pin(2+Tab) TO-3 | New Jersey Semiconductor |
2N6650 | Darlington Power Transistor | TAITRON |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
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