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PDF 2N6609 Data sheet ( Hoja de datos )
| Número de pieza | 2N6609 | |
| Descripción | COMPLEMENTARY POWER TRANSISTORS | |
| Fabricantes | ON Semiconductor | |
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NPN 2N3773*, PNP 2N6609
Preferred Device
Complementary Silicon
Power Transistors
The 2N3773 and 2N6609 are PowerBaset power transistors
designed for high power audio, disk head positioners and other linear
applications. These devices can also be used in power switching
circuits such as relay or solenoid drivers, DC−DC converters or
inverters.
Features
• Pb−Free Packages are Available**
• High Safe Operating Area (100% Tested) 150 W @ 100 V
• Completely Characterized for Linear Operation
• High DC Current Gain and Low Saturation Voltage
hFE = 15 (Min) @ 8.0 A, 4.0 V
VCE(sat) = 1.4 V (Max) @ IC = 8.0 A, IB = 0.8 A
• For Low Distortion Complementary Designs
MAXIMUM RATINGS (Note 1)
Rating
Symbol
Value
Unit
Collector − Emitter Voltage
Collector − Emitter Voltage
Collector − Base Voltage
Emitter − Base Voltage
Collector Current
− Continuous
− Peak (Note 2)
VCEO
VCEX
VCBO
VEBO
IC
140 Vdc
160 Vdc
160 Vdc
7 Vdc
Adc
16
30
Base Current
− Continuous
− Peak (Note 2)
Total Power Dissipation @ TA = 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
IB
PD
TJ, Tstg
4
15
150
0.855
−65 to +200
Adc
W
W/°C
°C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected.
1. Indicates JEDEC Registered Data.
2. Pulse Test: Pulse Width = 5 ms, Duty Cycle v 10%.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance,
Junction−to−Case
RqJC
1.17 °C/W
http://onsemi.com
16 A COMPLEMENTARY
POWER TRANSISTORS
140 V, 150 W
MARKING
DIAGRAM
TO−204
CASE 1−07
2Nxxxx
MEX
AYYWW
xxxx
A
YY
WW
= 3773 or 6609
= Assembly Location
= Year
= Work Week
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
*Preferred devices are recommended choices for future
use and best overall value.
**For additional information on our Pb−Free strategy and soldering details,
please download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2004
July, 2004 − Rev. 10
1
Publication Order Number:
2N3773/D
1 page  
NPN 2N3773*, PNP 2N6609
PACKAGE DIMENSIONS
TO−204 (TO−3)
CASE 1−07
ISSUE Z
E
V
H
A
N
C
−T−
SEATING
PLANE
D 2 PL
K
0.13 (0.005) M T Q M Y M
U
L
−Y−
2
GB
1
−Q−
0.13 (0.005) M T Y M
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. ALL RULES AND NOTES ASSOCIATED WITH
REFERENCED TO−204AA OUTLINE SHALL APPLY.
INCHES
DIM MIN MAX
A 1.550 REF
B −−− 1.050
C 0.250 0.335
D 0.038 0.043
E 0.055 0.070
G 0.430 BSC
H 0.215 BSC
K 0.440 0.480
L 0.665 BSC
N −−− 0.830
Q 0.151 0.165
U 1.187 BSC
V 0.131 0.188
MILLIMETERS
MIN MAX
39.37 REF
−−− 26.67
6.35 8.51
0.97 1.09
1.40 1.77
10.92 BSC
5.46 BSC
11.18 12.19
16.89 BSC
−−− 21.08
3.84 4.19
30.15 BSC
3.33 4.77
STYLE 1:
PIN 1. BASE
2. EMITTER
CASE: COLLECTOR
http://onsemi.com
5
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet 2N6609.PDF ] | |
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