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S1A thru S1M
Vishay General Semiconductor
Surface Mount Glass Passivated Rectifier
DO-214AC (SMA)
PRIMARY CHARACTERISTICS
IF(AV)
VRRM
IFSM
EAS
IR
VF
TJ max.
1.0 A
50 V to 1000 V
40 A, 30 A
5 mJ
1.0 µA, 5.0 µA
1.1 V
150 °C
FEATURES
• Low profile package
• Ideal for automated placement
• Glass passivated chip junction
• Low forward voltage drop
• Low leakage current
• High forward surge capability
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 260 °C
• Solder dip 260 °C, 40 s
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
For use in general purpose rectification of
power supplies, inverters, converters and
freewheeling diodes for consumer, automotive and
telecommunication.
MECHANICAL DATAhttp://www.DataSheet4U.net/
Case: DO-214AC (SMA)
Epoxy meets UL 94V-0 flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix for consumer grade, meets JESD 201 class
1A whisker test, HE3 suffix for high reliability grade
(AEC Q101 qualified), meets JESD 201 class 2
whisker test
Polarity: Color band denotes cathode end
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL S1A S1B S1D S1G S1J S1K S1M UNIT
Device marking code
SA SB SD SG SJ SK SM
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current (Fig. 1)
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
VRRM
VRMS
VDC
IF(AV)
IFSM
50 100 200 400 600 800 1000 V
35 70 140 280 420 560 700 V
50 100 200 400 600 800 1000 V
1.0 A
40 30 A
Non-repetitive peak reverse avalanche energy
at 25 °C, IAS = 1 A, L = 10 mH
Operating junction and storage temperature range
EAS
TJ, TSTG
5
- 55 to + 150
mJ
°C
Document Number: 88711 For technical questions within your region, please contact one of the following:
Revision: 07-Apr-08
www.vishay.com
1
datasheet pdf - http://www.DataSheet4U.net/