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PDF 2N6547 Data sheet ( Hoja de datos )
| Número de pieza | 2N6547 | |
| Descripción | NPN SILICON POWER TRANSISTORS | |
| Fabricantes | ON Semiconductor | |
| Logotipo |  |
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ON Semiconductort
SWITCHMODEt Series NPN
Silicon Power Transistors
2N6547
The 2N6547 transistor is designed for high–voltage, high–speed,
power switching in inductive circuits where fall time is critical. They
are particularly suited for 115 and 220 volt line operated switch–mode
applications such as:
• Switching Regulators
• PWM Inverters and Motor Controls
• Solenoid and Relay Drivers
• Deflection Circuits
15 AMPERE
NPN SILICON
POWER TRANSISTORS
300 and 400 VOLTS
175 WATTS
Specification Features
• High Temperature Performance Specified for:
Reversed Biased SOA with Inductive Loads
Switching Times with Inductive Loads
Saturation Voltages
CASE 1–07
TO–204AA
(TO–3)
Leakage Currents
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎMAXIMUM RATINGS (1)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎRating
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector–Emitter Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector–Emitter Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector–Emitter Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎEmitter Base Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector Current— Continuous
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎΗ Peak(2)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎBase Current — Continuous
— Peak (2)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎEmitter Current— Continuous
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎΗ Peak(2)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTotal Power Dissipation
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ@ TC = 25_C
Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ@ TC = 100_C
Derate above 25_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎOperating and Storage Junction Temperature Range
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTHERMAL CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCharacteristic
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎThermal Resistance, Junction to Case
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎMaximum Lead Temperature for Soldering
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎPurposes: 1/8″ from Case for 5 Seconds
Symbol
VCEO(sus)
VCEX(sus)
VCEV
VEB
IC
ICM
IB
IBM
IE
IEM
PD
TJ, Tstg
Symbol
RθJC
TL
Value
400
450
850
9.0
15
30
10
20
25
35
175
100
1.0
–65 to +200
Max
1.0
275
Unit
Vdc
Vdc
Vdc
Vdc
Adc
Adc
Adc
Watts
W/_C
_C
Unit
_C/W
_C
© Semiconductor Components Industries, LLC, 2001
April, 2001 – Rev. 6
1
Publication Order Number:
2N6547/D
1 page  
2N6547
MAXIMUM RATED SAFE OPERATING AREAS
50 10 ms
20
10
5.0 ms 1.0 ms
5.0 100 µs
2.0 dc
1.0
0.5
TC = 25°C
0.2
0.1 BONDING WIRE LIMITED
0.05 THERMAL LIMIT (SINGLE PULSE)
0.02 SECOND BREAKDOWN LIMIT
0.01 CURVES APPLY BELOW RATED VCEO
2N6546
2N6547
0.005
5.0 7.0 10
20 30 50 70 100
200
300 400
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 7. Forward Bias Safe Operating Area
20 TURN OFF LOAD LINE
BOUNDARY FOR 2N6547.
FOR 2N6546, VCEO AND
16 VCEX ARE 100 VOLTS LESS.
12
VCEX(sus)
8.0 8.0 V
4.0 VBE(off) v 5 V
TC v 100°C
VCEO(sus)
VCEX(sus)
0
0 100 200 300 400 500
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 8. Reverse Bias Safe Operating Area
There are two limitations on the power handling ability of
100 a transistor: average junction temperature and second
80
SECOND BREAKDOWN
DERATING
breakdown. Safe operating area curves indicate IC – VCE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
60
THERMAL DERATING
40
20
dissipation than the curves indicate.
The data of Figure 7 is based on TC = 25_C; TJ(pk) is
variable depending on power level. Second breakdown
pulse limits are valid for duty cycles to 10% but must be
derated when TC ≥ 25_C. Second breakdown limitations do
not derate the same as thermal limitations. Allowable
current at the voltages shown on Figure 7 may be found at
any case temperature by using the appropriate curve on
0 Figure 9.
0
40 80 120 160
TC, CASE TEMPERATURE (°C)
200 TJ(pk) may be calculated from the data in Figure 10. At
high case temperatures, thermal limitations will reduce the
Figure 9. Power Derating
power that can be handled to values less than the limitations
imposed by second breakdown.
1.0
0.7 D = 0.5
0.5
0.3 0.2
0.2
0.1
0.1
0.07 0.05
0.05 0.02
0.03
0.02 0.01
0.01
0.01 0.02
SINGLE PULSE
0.05 0.1
0.2
ZθJC (t) = r(t) RθJC
RθJC = 1.0°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) - TC = P(pk) ZθJC(t)
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
0.5 1.0 2.0
5.0 10
t, TIME (ms)
20
50 100 200
500 1.0 k
Figure 10. Thermal Response
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