IRGP4660DPbF Datasheet PDF - International Rectifier
| Part Number | IRGP4660DPbF | |
| Description | INSULATED GATE BIPOLAR TRANSISTOR | |
| Manufacturers | International Rectifier | |
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IRGP4660DPbF
IRGP4660D-EPbF
VCES = 600V
IC = 60A, TC = 100°C
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
CC
C
tSC 5μs, TJ(max) = 175°C
VCE(on) typ. = 1.60V @ IC = 48A
Applications
• Industrial Motor Drive
• Inverters
• UPS
• Welding
G
E
n-channel
G
Gate
GC E
TO-247AC
IRGP4660DPbF
C
Collector
GC E
TO-247AD
IRGP4660D-EP
E
Emitter
Features
Low VCE(ON) and Switching Losses
Square RBSOA and Maximum Junction Temperature 175°C
Positive VCE (ON) Temperature Coefficient
5μs short circuit SOA
Lead-Free, RoHS compliant
Benefits
High efficiency in a wide range of applications and switching
frequencies
Improved reliability due to rugged hard switching performance
and higher power capability
Excellent current sharing in parallel operation
Enables short circuit protection scheme
Environmentally friendly
Base part number
IRGP4660DPbF
IRGP4660D-EPbF
Package Type
TO-247AC
TO-247AD
Standard Pack
Form
Quantity
Tube
25
Tube
http://www.DataSheet4U.net/
25
Orderable part number
IRGP4660DPbF
IRGP4660D-EPbF
Absolute Maximum Ratings
Parameter
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
IF @ TC = 25°C
IF @ TC = 100°C
IFM
V GE
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
ePulse Collector Current, VGE = 15V
cClamped Inductive Load Current, VGE = 20V
Diode Continous Forward Current
Diode Continous Forward Current
Diode Maximum Forward Current
Continuous Gate-to-Emitter Voltage
Transient Gate-to-Emitter Voltage
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TST G
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw
Thermal Resistance
RJC (IGBT)
RJC (Diode)
RCS
RJA
Parameter
fJunction-to-Case (IGBT)
fJunction-to-Case (Diode)
Case-to-Sink (flat, greased surface)
Junction-to-Ambient (typical socket mount)
Max.
600
100
60
144
192
100
60
192
±20
±30
330
170
-55 to +175
300 (0.063 in. (1.6mm) from case)
10 lbf·in (1.1 N·m)
Min.
–––
–––
–––
–––
Typ.
–––
–––
0.24
–––
Max.
0.45
0.92
–––
40
Units
V
A
V
W
°C
Units
°C/W
1 www.irf.com © 2012 International Rectifier
January 8, 2013
datasheet pdf - http://www.DataSheet4U.net/
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IRGP4660DPbF/IRGP4660D-EPbF
6000
1000
5000
4000
3000
2000
1000
EOFF
EON
tdOFF
100
tdON
tF
tR
0
0 50 100 150
IC (A)
Fig. 13 - Typ. Energy Loss vs. IC
TJ = 175°C; L = 200μH; VCE = 400V, RG = 10; VGE = 15V
5000
4500
4000
3500
EOFF
EON
3000
2500
2000
1500
1000
0
25 50 75 100 125
Rg ()
Fig. 15 - Typ. Energy Loss vs. RG
TJ = 175°C; L = 200μH; VCE = 400V, ICE = 48A; VGE = 15V
45
40
35 RG = 10
30
25 RG = 22
20 RG = 47
15
RG = 100
10
5
0
0 20 40 60 80
IF (A)
Fig. 17 - Typ. Diode IRR vs. IF
TJ = 175°C
100
10
0
20 40 60 80 100
IC (A)
Fig. 14 - Typ. Switching Time vs. IC
TJ = 175°C; L = 200μH; VCE = 400V, RG = 10; VGE = 15V
1000
tdOFF
http://www.DataSheet4U.net/
100
tR
tdON
tF
10
0
25 50 75 100 125
RG ()
Fig. 16 - Typ. Switching Time vs. RG
TJ = 175°C; L = 200μH; VCE = 400V, ICE = 48A; VGE = 15V
45
40
35
30
25
20
15
10
0
25 50 75 100
RG (
Fig. 18 - Typ. Diode IRR vs. RG
TJ = 175°C
125
5 www.irf.com © 2012 International Rectifier
January 8, 2013 datasheetpdf-http://www.DataSheet4U.net/
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Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for IRGP4660DPbF electronic component. |
| Information | Total 12 Pages | |
| Link URL | [ Copy URL to Clipboard ] | |
| Download | [ IRGP4660DPbF.PDF Datasheet ] | |
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