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PDF 2N6508 Data sheet ( Hoja de datos )
| Número de pieza | 2N6508 | |
| Descripción | Silicon Controlled Rectifiers | |
| Fabricantes | ON Semiconductor | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de 2N6508 (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
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2N6504 Series
Preferred Device
Silicon Controlled Rectifiers
Reverse Blocking Thyristors
Designed primarily for half-wave ac control applications, such as
motor controls, heating controls and power supply crowbar circuits.
• Glass Passivated Junctions with Center Gate Fire for Greater
Parameter Uniformity and Stability
• Small, Rugged, Thermowatt Constructed for Low Thermal
Resistance, High Heat Dissipation and Durability
• Blocking Voltage to 800 Volts
• 300 A Surge Current Capability
• Device Marking: Logo, Device Type, e.g., 2N6504, Date Code
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol Value
Unit
*Peak Repetitive Off–State Voltage (Note 1.) VDRM,
Volts
(Gate Open, Sine Wave 50 to 60 Hz,
VRRM
TJ = 25 to 125°C)
2N6504
50
2N6505
100
2N6507
400
2N6508
600
2N6509
800
On-State RMS Current
(180° Conduction Angles; TC = 85°C)
Average On-State Current
(180° Conduction Angles; TC = 85°C)
Peak Non-repetitive Surge Current
(1/2 Cycle, Sine Wave 60 Hz, TJ = 100°C)
Forward Peak Gate Power
(Pulse Width ≤ 1.0 µs, TC = 85°C)
Forward Average Gate Power
(t = 8.3 ms, TC = 85°C)
Forward Peak Gate Current
(Pulse Width ≤ 1.0 µs, TC = 85°C)
Operating Junction Temperature Range
IT(RMS)
IT(AV)
ITSM
PGM
PG(AV)
IGM
TJ
25
16
250
20
0.5
2.0
–40 to
+125
A
A
A
Watts
Watts
A
°C
Storage Temperature Range
Tstg –40 to °C
+150
*Indicates JEDEC Registered Data
1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings
apply for zero or negative gate voltage; however, positive gate voltage shall
not be applied concurrent with negative potential on the anode. Blocking
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
http://onsemi.com
SCRs
25 AMPERES RMS
50 thru 800 VOLTS
G
AK
1
2
3
1
2
3
4
MARKING
DIAGRAM
4
TO–220AB
CASE 221A
STYLE 3
YY WW
650x
x = 4, 5, 7, 8 or 9
YY = Year
WW = Work Week
PIN ASSIGNMENT
Cathode
Anode
Gate
Anode
ORDERING INFORMATION
Device
Package
Shipping
2N6504
TO220AB
500/Box
2N6505
TO220AB
500/Box
2N6507
TO220AB
500/Box
2N6508
TO220AB
500/Box
2N6509
TO220AB
500/Box
Preferred devices are recommended choices for future use
and best overall value.
© Semiconductor Components Industries, LLC, 2001
April, 2001 – Rev. 4
1
Publication Order Number:
2N6504/D
1 page  
2N6504 Series
TYPICAL TRIGGER CHARACTERISTICS
100
10
1
-40 -25 -10 5 20 35 50 65 80 95 110 125
TJ, JUNCTION TEMPERATURE (°C)
Figure 6. Typical Gate Trigger Current
versus Junction Temperature
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
-40 -25 -10 5 20 35 50 65 80
TJ, JUNCTION TEMPERATURE (°C)
95 110 125
Figure 7. Typical Gate Trigger Voltage
versus Junction Temperature
100
10
1
-40 -25 -10
5 20 35 50 65 80
TJ, JUNCTION TEMPERATURE (°C)
95 110 125
Figure 8. Typical Holding Current
versus Junction Temperature
http://onsemi.com
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet 2N6508.PDF ] | |
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