DataSheetWiki


2N6507 fiches techniques PDF

ON Semiconductor - Silicon Controlled Rectifiers

Numéro de référence 2N6507
Description Silicon Controlled Rectifiers
Fabricant ON Semiconductor 
Logo ON Semiconductor 





1 Page

No Preview Available !





2N6507 fiche technique
2N6504 Series
Preferred Device
Silicon Controlled Rectifiers
Reverse Blocking Thyristors
Designed primarily for half-wave ac control applications, such as
motor controls, heating controls and power supply crowbar circuits.
Glass Passivated Junctions with Center Gate Fire for Greater
Parameter Uniformity and Stability
Small, Rugged, Thermowatt Constructed for Low Thermal
Resistance, High Heat Dissipation and Durability
Blocking Voltage to 800 Volts
300 A Surge Current Capability
Device Marking: Logo, Device Type, e.g., 2N6504, Date Code
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol Value
Unit
*Peak Repetitive Off–State Voltage (Note 1.) VDRM,
Volts
(Gate Open, Sine Wave 50 to 60 Hz,
VRRM
TJ = 25 to 125°C)
2N6504
50
2N6505
100
2N6507
400
2N6508
600
2N6509
800
On-State RMS Current
(180° Conduction Angles; TC = 85°C)
Average On-State Current
(180° Conduction Angles; TC = 85°C)
Peak Non-repetitive Surge Current
(1/2 Cycle, Sine Wave 60 Hz, TJ = 100°C)
Forward Peak Gate Power
(Pulse Width 1.0 µs, TC = 85°C)
Forward Average Gate Power
(t = 8.3 ms, TC = 85°C)
Forward Peak Gate Current
(Pulse Width 1.0 µs, TC = 85°C)
Operating Junction Temperature Range
IT(RMS)
IT(AV)
ITSM
PGM
PG(AV)
IGM
TJ
25
16
250
20
0.5
2.0
–40 to
+125
A
A
A
Watts
Watts
A
°C
Storage Temperature Range
Tstg –40 to °C
+150
*Indicates JEDEC Registered Data
1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings
apply for zero or negative gate voltage; however, positive gate voltage shall
not be applied concurrent with negative potential on the anode. Blocking
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
http://onsemi.com
SCRs
25 AMPERES RMS
50 thru 800 VOLTS
G
AK
1
2
3
1
2
3
4
MARKING
DIAGRAM
4
TO–220AB
CASE 221A
STYLE 3
YY WW
650x
x = 4, 5, 7, 8 or 9
YY = Year
WW = Work Week
PIN ASSIGNMENT
Cathode
Anode
Gate
Anode
ORDERING INFORMATION
Device
Package
Shipping
2N6504
TO220AB
500/Box
2N6505
TO220AB
500/Box
2N6507
TO220AB
500/Box
2N6508
TO220AB
500/Box
2N6509
TO220AB
500/Box
Preferred devices are recommended choices for future use
and best overall value.
© Semiconductor Components Industries, LLC, 2001
April, 2001 – Rev. 4
1
Publication Order Number:
2N6504/D

PagesPages 8
Télécharger [ 2N6507 ]


Fiche technique recommandé

No Description détaillée Fabricant
2N650 Trans GP BJT NPN 350V 0.5A 3-Pin TO-92 New Jersey Semiconductor
New Jersey Semiconductor
2N6500 HIGH SPEED EPITAXIAL COLLECTOR SILICON NPN PLANAR TRANSISTORS ETC
ETC
2N6500 Bipolar NPN Device Seme LAB
Seme LAB
2N6500 Silicon Power Transistor SavantIC
SavantIC

US18650VTC5A

Lithium-Ion Battery

Sony
Sony
TSPC106

PCI Bus Bridge Memory Controller

ATMEL
ATMEL
TP9380

NPN SILICON RF POWER TRANSISTOR

Advanced Semiconductor
Advanced Semiconductor


www.DataSheetWiki.com    |   2020   |   Contactez-nous  |   Recherche