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What is 2N6491?

This electronic component, produced by the manufacturer "ON Semiconductor", performs the same function as "COMPLEMENTARY SILICON POWER TRANSISTORS".


2N6491 Datasheet PDF - ON Semiconductor

Part Number 2N6491
Description COMPLEMENTARY SILICON POWER TRANSISTORS
Manufacturers ON Semiconductor　
Logo ON Semiconductor Logo　


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2N6487, 2N6488 (NPN),
2N6490, 2N6491 (PNP)
Complementary Silicon
Plastic Power Transistors
These devices are designed for use in general−purpose amplifier and
switching applications.
Features
• High DC Current Gain
• High Current Gain − Bandwidth Product
• TO−220 Compact Package
• These Devices are Pb−Free and are RoHS Compliant*
MAXIMUM RATINGS (Note 1)
Rating
Symbol Value
Unit
Collector−Emitter Voltage
2N6487, 2N6490
2N6488, 2N6491
VCEO
60
80
Vdc
Collector−Base Voltage
2N6487, 2N6490
2N6488, 2N6491
VCB Vdc
70
90
Emitter−Base Voltage
Collector Current − Continuous
Base Current
Total Power Dissipation
@ TC = 25_C
Derate above 25_C
VEB 5.0 Vdc
IC 15 Adc
IB 5.0 Adc
PD
75 W
0.6 W/°C
Total Power Dissipation
@ TA = 25_C
Derate above 25_C
PD
1.8 W
0.014
W/°C
Operating and Storage Junction
Temperature Range
TJ, Tstg −65 to +150 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Indicates JEDEC Registered Data.
THERMAL CHARACTERISTICS
Characteristics
Thermal Resistance, Junction−to−Case
Thermal Resistance, Junction−to−Ambient
Symbol
RqJC
RqJA
Max
1.67
70
Unit
_C/W
_C/W
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2014
November, 2014 − Rev. 16
1
www.onsemi.com
15 AMPERE
COMPLEMENTARY SILICON
POWER TRANSISTORS
60−80 VOLTS, 75 WATTS
PNP
COLLECTOR 2, 4
NPN
COLLECTOR 2, 4
1
BASE
EMITTER 3
4
1
BASE
EMITTER 3
TO−220
CASE 221A
STYLE 1
1
2
3
MARKING DIAGRAM
2N64xxG
AYWW
2N64xx = Specific Device Code
xx = See Table on Page 5
G = Pb−Free Package
A = Assembly Location
Y = Year
WW = Work Week
ORDERING INFORMATION
See detailed ordering, marking, and shipping information in
the package dimensions section on page 5 of this data sheet.
Publication Order Number:
2N6487/D

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2N6491 equivalent
2N6487, 2N6488 (NPN), 2N6490, 2N6491 (PNP)
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
5.0
TJ = 25°C
2.0
1.8
TJ = 25°C
1.6
IC = 1.0 A
1.4
1.2
1.0 IC = 1.0 A
4.0 A 8.0 A
4.0 A 8.0 A
0.8
0.6
0.4
0.2
10
20 50 100
200 500 1000 2000 5000
0
5.0 10
20 50 100
200 500 1000 2000 5000
IB, BASE CURRENT (mA)
IB, BASE CURRENT (mA)
Figure 9. Collector Saturation Region
2.8 2.8
2.4 TJ = 25°C
2.0
2.4 TJ = 25°C
2.0
1.6 1.6
1.2
VBE(sat) = IC/IB = 10
0.8
1.2
VBE(sat) @ IC/IB = 10
0.8
0.4
0
0.2
VBE @ VCE = 2.0 V
VCE(sat) @ IC/IB = 10
0.5 1.0
2.0
0.4 VBE @ VCE = 2.0 V
5.0 10
20
VCE(sat) @ IC/IB = 10
0
0.2 0.5 1.0
2.0
5.0 10
IC, COLLECTOR CURRENT (AMP)
IC, COLLECTOR CURRENT (AMP)
Figure 10. “On” Voltages
20
ORDERING INFORMATION
Device
2N6487G
2N6488G
2N6490G
2N6491G
Device Marking
2N6487
2N6488
2N6490
2N6491
Package
TO−220
(Pb−Free)
TO−220
(Pb−Free)
TO−220
(Pb−Free)
TO−220
(Pb−Free)
http://onsemi.com
5
Shipping
50 Units / Rail
50 Units / Rail
50 Units / Rail
50 Units / Rail


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