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PDF 2SA1743 Data sheet ( Hoja de datos )
| Número de pieza | 2SA1743 | |
| Descripción | PNP SILICON EPITAXIAL TRANSISTOR | |
| Fabricantes | NEC | |
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DATA SHEET
SILICON POWER TRANSISTOR
2SA1743
PNP SILICON EPITAXIAL TRANSISTOR
FOR HIGH-SPEED SWITCHING
The 2SA1743 is a power transistor developed for high-speed
switching and features a high hFE at low VCE(sat). This transistor is
ideal for use as a driver in DC/DC converters and actuators.
In addition, a small resin-molded insulation type package
contributes to high-density mounting and reduction of mounting
cost.
PACKAGE DRAWING (UNIT: mm)
FEATURES
• High hFE and low VCE(sat):
hFE ≥ 100 (VCE = −2 V, IC = −2 A)
V CE(sat) ≤ 0.3 V (IC = −6 A, IB = −0.3 A)
• Full-mold package that does not require an insulating board or
bushing
QUALITY GRADES
• Standard
http://www.DataSheet4U.net/
Please refer to “Quality Grades on NEC Semiconductor Devices”
(Document No. C11531E) published by NEC Corporation to know
the specification of quality grade on the devices and its
recommended applications.
Electrode Connection
1. Base
2. Collector
3. Emitter
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
Parameter
Symbol
Ratings
Unit
Collector to base voltage
VCBO
−100
V
Collector to emitter voltage
VCEO
−60 V
Emitter to base voltage
VEBO
−7.0 V
Collector current (DC)
IC(DC)
−10 A
Collector current (pulse)
IC(pulse)*
−20 A
Base current (DC)
IB(DC)
−5.0 A
Total power dissipation
PT (Tc = 25°C)
30
W
Total power dissipation
PT (Ta = 25°C)
2.0
W
Junction temperature
Tj 150 °C
Storage temperature
Tstg
−55 to +150
°C
* PW ≤ 300 µs, duty cycle ≤ 10%
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D16126EJ1V0DS00 (1st edition)
Date Published April 2002 N CP(K)
Printed in Japan
©
2002
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| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet 2SA1743.PDF ] | |
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