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IRF6N40 fiches techniques PDF

Suntac Electronic - Power MOSFET ( Transistor )

Numéro de référence IRF6N40
Description Power MOSFET ( Transistor )
Fabricant Suntac Electronic 
Logo Suntac Electronic 





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IRF6N40 fiche technique
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GENERAL DESCRIPTION
This Power MOSFET is designed for low voltage, high
speed power switching applications such as switching
regulators, conveters, solenoid and relay drivers.
ʳ
PIN CONFIGURATION
TO-220
Top View
FEATURES
IRF6N40
POWER MOSFET
‹ Higher Current Rating
‹ Lower rDS(ON), Lower Capacitances
‹ Lower Total Gate Charge
‹ Tighter VSD Specifications
‹ Avalanche Energy Specified
SYMBOL
D
G
S
12 3
ʳ
ORDERING INFORMATION
N-Channel MOSFET
Part Number
Package
IRF6N40................................................TO-220
ABSOLUTE MAXIMUM RATINGS
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Rating
Drain to Current Ё Continuous
Ё Pulsed (Note 1)
Gate-to-Source Voltage Ё Continue
Total Power Dissipation
Derate above 25к
Single Pulse Drain-to-Source Avalanche Energy Ё TJ = 25к
(VDD = 100V, VGS = 10V, IL = 6A, L = 10mH, RG = 25ȍ)
Operating and Storage Temperature Range
Thermal Resistance Ё Junction to Case
Ё Junction to Ambient
Maximum Lead Temperature for Soldering Purposes, 1/8” from case for 10 seconds
Symbol
ID
IDM
VGS
PD
EAS
TJ, TSTG
șJC
șJA
TL
Value
6.0
21
±20
96
0.77
180
-55 to 150
1.70
62
300
Unit
A
V
W
W/к
mJ
к
к/W
к
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