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Motorola Inc - TRIACS Silicon Bidirectional Triode Thyristors

Numéro de référence 2N6346
Description TRIACS Silicon Bidirectional Triode Thyristors
Fabricant Motorola Inc 
Logo Motorola  Inc 





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2N6346 fiche technique
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Triacs
Silicon Bidirectional Triode Thyristors
. . . designed primarily for full-wave ac control applications, such as light dimmers,
motor controls, heating controls and power supplies; or wherever full-wave silicon
gate controlled solid-state devices are needed. Triac type thyristors switch from a
blocking to a conducting state for either polarity of applied anode voltage with positive
or negative gate triggering.
Blocking Voltage to 800 Volts
All Diffused and Glass Passivated Junctions for Greater Parameter Uniformity
and Stability
Small, Rugged, Thermowatt Construction for Low Thermal Resistance, High Heat
Dissipation and Durability
Gate Triggering Guaranteed in Two Modes (2N6342, 2N6343, 2N6344, 2N6345)
or Four Modes (2N6346, 2N6347, 2N6348, 2N6349)
For 400 Hz Operation, Consult Factory
12 Ampere Devices Available as 2N6342A thru 2N6349A
Order this document
by 2N6342/D
2N6342
thru
2N6349
TRIACs
8 AMPERES RMS
200 thru 800 VOLTS
MT1
MT2 G
CASE 221A-04
(TO-220AB)
STYLE 4
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted.)
Rating
*Peak Repetitive Off-State Voltage(1)
(Gate Open, TJ = –40 to +110°C)
1/2 Sine Wave 50 to 60 Hz, Gate Open
2N6342, 2N6346
2N6343, 2N6347
2N6344, 2N6348
2N6345, 2N6349
Symbol
VDRM
Value
200
400
600
800
Unit
Volts
*RMS On-State Current
Full Cycle Sine Wave 50 to 60 Hz
(TC = +80°C)
(TC = +90°C)
IT(RMS)
8
4
Amps
*Peak Non-repetitive Surge Current
(One Full Cycle, 60 Hz, TC = +80°C)
Preceded and followed by Rated Current
Circuit Fusing
(t = 8.3 ms)
ITSM 100 Amps
I2t 40 A2s
*Peak Gate Power (TC = +80°C, Pulse Width = 2 µs)
PGM
20 Watts
*Average Gate Power (TC = +80°C, t = 8.3 ms)
PG(AV)
0.5
Watt
*Peak Gate Current
IGM 2 Amps
*Peak Gate Voltage
VGM 10 Volts
*Operating Junction Temperature Range
TJ –40 to +125 °C
*Storage Temperature Range
Tstg –40 to +150
°C
1. VDRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
REV 1
Motorola Thyristor Device Data
© Motorola, Inc. 1995
1

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