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PDF 2N6344 Data sheet ( Hoja de datos )
| Número de pieza | 2N6344 | |
| Descripción | Silicon Bidirectional Thyristors | |
| Fabricantes | ON Semiconductor | |
| Logotipo |  |
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2N6344, 2N6349
Preferred Device
Triacs
Silicon Bidirectional Thyristors
Designed primarily for full-wave ac control applications, such as
light dimmers, motor controls, heating controls and power supplies; or
wherever full–wave silicon gate controlled solid–state devices are
needed. Triac type thyristors switch from a blocking to a conducting
state for either polarity of applied main terminal voltage with positive
or negative gate triggering.
• Blocking Voltage to 800 Volts
• All Diffused and Glass Passivated Junctions for Greater Parameter
Uniformity and Stability
• Small, Rugged, Thermowatt Construction for Low Thermal
Resistance, High Heat Dissipation and Durability
• Gate Triggering Guaranteed in all Four Quadrants
• For 400 Hz Operation, Consult Factory
• Device Marking: Logo, Device Type, e.g., 2N6344, Date Code
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol Value
* Peak Repetitive Off–State Voltage(1)
(TJ = –40 to +110°C, Sine Wave 50 to
60 Hz, Gate Open)
2N6344
2N6349
VDRM,
VRRM
600
800
Unit
Volts
*On–State RMS Current
(TC = +80°C)
Full Cycle Sine Wave 50 to 60 Hz
(TC = +90°C)
IT(RMS)
Amps
8.0
4.0
*Peak Non–Repetitive Surge Current
(One Full Cycle, Sine Wave 60 Hz,
TC = +25°C)
Preceded and followed by rated current
ITSM
100 Amps
Circuit Fusing Consideration (t = 8.3 ms)
I2t
40 A2s
*Peak Gate Power
(TC = +80°C, Pulse Width = 2 µs)
*Average Gate Power
(TC = +80°C, t = 8.3 ms)
PGM
20 Watts
PG(AV) 0.5 Watt
*Peak Gate Current
(TC = +80°C, Pulse Width = 2.0 µs)
IGM
2.0 Amps
*Peak Gate Voltage
(TC = +80°C, Pulse Width = 2.0 µs)
*Operating Junction Temperature Range
VGM
TJ
10 Volts
– 40 to
+125
°C
*Storage Temperature Range
Tstg
– 40 to
°C
+150
(1) VDRM and VRRM for all types can be applied on a continuous basis. Blocking
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
http://onsemi.com
TRIACS
8 AMPERES RMS
600 thru 800 VOLTS
MT2
MT1
G
4
1
2
3
TO–220AB
CASE 221A
STYLE 4
PIN ASSIGNMENT
1 Main Terminal 1
2 Main Terminal 2
3 Gate
4 Main Terminal 2
ORDERING INFORMATION
Device
Package
Shipping
2N6344
TO220AB
500/Box
2N6349
TO220AB
500/Box
Preferred devices are recommended choices for future use
and best overall value.
© Semiconductor Components Industries, LLC, 1999
March, 2000 – Rev. 1
1
Publication Order Number:
2N6344/D
1 page  
2N6344, 2N6349
100
70
50
30
20
TJ = 100°C 25°C
10
7.0
5.0
3.0
2.0
1.0
0.7
0.5
20
GATE OPEN
MAIN TERMINAL #1
POSITIVE
10
7.0
5.0
MAIN TERMINAL #2
POSITIVE
3.0
2.0
–60 –40 –20 0 20 40 60 80 100 120 140
TJ, JUNCTION TEMPERATURE (°C)
Figure 6. Typical Holding Current
100
80
60
0.3
0.2
0.1
0.4
0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 4.0 4.4
vTM, INSTANTANEOUS ON-STATE VOLTAGE (VOLTS)
Figure 5. On–State Characteristics
40
20
0
1.0
CYCLE
TJ = 100°C
f = 60 Hz
Surge is preceded and followed by rated current
2.0 3.0
5.0
NUMBER OF CYCLES
7.0
Figure 7. Maximum Non–Repetitive
Surge Current
10
1.0
0.5
0.2
0.1
0.05
0.02
0.01
0.1
0.2
0.5 1.0 2.0
ZθJC(t) = r(t) • RθJC
5.0 20 50 100 200
t,TIME (ms)
Figure 8. Typical Thermal Response
500 1.0 k 2.0 k
5.0 k 10 k
http://onsemi.com
5
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| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet 2N6344.PDF ] | |
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