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CDBQR70-HF fiches techniques PDF

Comchip - SMD Schottky Barrier Diode

Numéro de référence CDBQR70-HF
Description SMD Schottky Barrier Diode
Fabricant Comchip 
Logo Comchip 





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CDBQR70-HF fiche technique
SMD Schottky Barrier Diode
CDBQR70-HF
Io = 70 mA
VR = 70 Volts
RoHS Device
Halogen Free
Features
-Low forward voltage.
-Designed for mounting on small surface.
-Extremely thin/leadless package.
-Majority carrier conduction.
0402/SOD-923F
0.041(1.05)
0.037(0.95)
0.026(0.65)
0.022(0.55)
Mechanical data
-Case: 0402/SOD-923F standard package,
molded plastic.
0.012(0.30) Typ.
0.022(0.55)
0.018(0.45)
-Terminals: Gold plated, solderable per
MIL-STD-750,method 2026.
-Marking Code: Cathode band & BG
-Mounting position: Any
0.020(0.50) Typ.
-Weight: 0.001 gram(approx.).
Dimensions in inches and (millimeter)
http://www.DataSheet4U.net/
Maximum Rating (at TA=25OC unless otherwise noted)
Parameter
Conditions
Symbol Min Typ Max Unit
Peak reverse voltage
VRM
70 V
Reverse voltage
VR 70 V
RMS reverse voltage
VR(RMS)
49 V
Average forward rectified current
Forward current,surge peak
8.3 ms single half sine-wave superimposed
on rate load(JEDEC method)
Power dissipation
IO
IFSM
PD
70 mA
0.1 A
125 mW
Storage temperature
TSTG
-65
+125 OC
Junction temperature
Tj +125 OC
Electrical Characteristics (at TA=25OC unless otherwise noted)
Parameter
Conditions
Symbol Min Typ Max Unit
Forward voltage
Reverse current
Capacitance between terminals
Reverse recovery time
IF = 1mA
IF = 15mA
VR = 50V
f = 1 MHz, and 0 VDC reverse voltage
IF=IR=10mA,Irr=0.1xIR,RL=100 Ohm
VF
IR
CT
Trr
0.41
1
0.1
2
5
V
uA
pF
nS
QW-G1103
Comchip Technology CO., LTD.
REV:B
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