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PDF CDBQR0140R Data sheet ( Hoja de datos )

Número de pieza CDBQR0140R
Descripción SMD Schottky Barrier Diode
Fabricantes Comchip　
Logotipo Comchip Logotipo



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No Preview Available ! CDBQR0140R Hoja de datos, Descripción, Manual

SMD Schottky Barrier Diode
CDBQR0140R (RoHS Device)
Io = 100 mA
VR = 40 Volts
SMD Diodes Specialist
Features
Low reverse current.
Designed for mounting on small surface.
Extremely thin / leadless package.
Majority carrier conduction.
Mechanical data
Case: 0402(1005) standard package,
molded plastic.
Terminals: Gold plated, solderable per
MIL-STD-750,method 2026.
Marking Code: Cathode band & B9
Mounting position: Any.
Weight: 0.001 gram(approx.).
0402(1005)
0.041(1.05)
0.037(0.95)
0.026(0.65)
0.022(0.55)
0.012(0.30) Typ.
0.022(0.55)
0.018(0.45)
0.020(0.50) Typ.
Dimensions in inches and (millimeter)
http://www.DataSheet4U.net/
Maximum Rating (at TA=25OC unless otherwise noted)
Parameter
Conditions
Symbol Min Typ Max Unit
Repetitive Peak reverse voltage
VRRM
45 V
Reverse voltage
VR 40 V
Average forward rectified current
Forward current,surge peak
8.3 ms single half sine-wave superimposed
on rate load (JEDEC method)
Power Dissipation
IO
IFSM
PD
100 mA
1A
125 mW
Storage temperature
TSTG
-40
+125 OC
Junction temperature
Tj +125 OC
Electrical Characteristics (at TA=25OC unless otherwise noted)
Parameter
Conditions
Symbol Min Typ Max Unit
Forward voltage
IF = 10mA
VF 0.45 V
Reverse current
VR = 10V
IR 1 uA
Capacitance between terminals f = 1 MHz, and 10 VDC reverse voltage
CT
6 pF
QW-A1115
Comchip Technology CO., LTD.
REV:C
Page 1
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