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Numéro de référence | TIC216N | ||
Description | (TIC216x) SILICON TRIACS | ||
Fabricant | Comset Semiconductors | ||
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1 Page
SEMICONDUCTORS
TIC216A, TIC216B, TIC216D, TIC216M, TIC216N, TIC216S
SILICON TRIACS
• 6 A RMS
• Glass Passivated Wafer
• 100 V to 800 V Off-State Voltage
• Max IGT of 5 mA (Quadrants 1-3)
• Sensitive gate triacs
• Compliance to ROH
ABSOLUTE MAXIMUM RATINGS
Symbol
Ratings
VDRM
IT(RMS)
ITSM
ITSM
IGM
PGM
PG(AV)
TC
Tstg
TL
Repetitive peak off-state voltage
(see Note1)
Full-cycle RMS on-state current at (or below)http://www.DataSheet4U.net/
70°C case temperature (see note2)
Peak on-state surge current full-sine-wave
(see Note3)
Peak on-state surge current half-sine-wave
(see Note4)
Peak gate current
Peak gate power dissipation at (or below)
85°C case temperature (pulse width ≤200 µs)
Average gate power dissipation at (or below)
85°C case (see Note5)
Operating case temperature range
Storage temperature range
Lead temperature 1.6 mm from case for
10 seconds
Value
Unit
A B DMS N
100 200 400 600 700 800
V
6A
60 A
70 A
±1 A
2.2 W
0.9
-40 to +110
-40 to +125
230
W
°C
°C
°C
THERMAL CHARACTERISTICS
Symbol
Ratings
R∂JC Junction to case thermal resistance
R∂JA Junction to free air thermal resistance
Value
≤ 2.5
≤ 62.5
Unit
°C/W
30/10/2012
COMSET SEMICONDUCTORS
1|3
datasheet pdf - http://www.DataSheet4U.net/
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Pages | Pages 3 | ||
Télécharger | [ TIC216N ] |
No | Description détaillée | Fabricant |
TIC216 | SILICON TRIACS | Power Innovations Limited |
TIC216A | (TIC216x) SILICON TRIACS | Comset Semiconductors |
TIC216B | (TIC216x) SILICON TRIACS | Comset Semiconductors |
TIC216D | Triacs | Inchange Semiconductor |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
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