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TIC106S fiches techniques PDF

Comset Semiconductors - (TIC106x) P-N-P-N SILICON REVERSE-BLOCKING TRIODE THYRISTORS

Numéro de référence TIC106S
Description (TIC106x) P-N-P-N SILICON REVERSE-BLOCKING TRIODE THYRISTORS
Fabricant Comset Semiconductors 
Logo Comset Semiconductors 





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TIC106S fiche technique
SEMICONDUCTORS
TIC106A, TIC106B, TIC106C, TIC106D, TIC106E, TIC106M,
TIC106N, TIC106S
P-N-P-N SILICON REVERSE-BLOCKING TRIODE
THYRISTORS
5 A Continuous On-State Current
30 A Surge-Current
Glass Passivated Wafer
100 V to 800 V Off-State Voltage
Max IGT of 200 µA
Compliance to ROHS
ABSOLUTE MAXIMUM RATINGS
Symbol
Ratings
VDRM
VRRM
IT(RMS)
IT(AV)
ITM
IGM
PGM
PG(AV)
TC
Tstg
TL
Repetitive peak off-state voltage
(see Note1)
Repetitive peak reverse voltage
Continuous on-state current at
(or below) 80°C case temperature
(see note2)
Average on-state current
(180° conduction angle) at(or below)
80°C case temperature (see Note3)
Surge on-state current (see Note4)
Peak positive gate current
(pulse width 300 µs)
Peak power dissipation
(pulse width 300 µs)
Average gate power dissipation
(see Note5)
Operating case temperature range
Storage temperature range
Lead temperature 1.6 mm from case
for 10 seconds
Value
A
http://www.DataSheet4U.net/
B
C
D
E
M
S
N
100 200 300 400 500 600 700 800
Unit
V
100 200 300 400 500 600 700 800 V
5A
3.2
30
0.2
1.3
0.3
-40 to +110
-40 to +125
230
A
A
A
W
W
°C
°C
°C
29/10/2012
COMSET SEMICONDUCTORS
1|4
datasheet pdf - http://www.DataSheet4U.net/

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