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2N6294 Datasheet دیتاشیت PDF دانلود

دیتاشیت - Central Semiconductor Corp - COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS

شماره قطعه 2N6294
شرح مفصل COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS
تولید کننده Central Semiconductor Corp 
آرم Central Semiconductor Corp 


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2N6294 شرح
2N6294 2N6295 NPN
2N6296 2N6297 PNP
COMPLEMENTARY SILICON
DARLINGTON POWER TRANSISTORS
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N6294, 2N6296
series devices are complementary silicon Darlington
power transistors, manufactured by the epitaxial base
process, designed for high gain amplifier and medium
speed switching applications.
MARKING: FULL PART NUMBER
TO-66 CASE
MAXIMUM RATINGS: (TC=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Collector Current
Continuous Base Current
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
SYMBOL
VCBO
VCEO
VEBO
IC
ICM
IB
PD
TJ, Tstg
JC
2N6294
2N6296
60
2N6295
2N6297
80
60 80
5.0
4.0
8.0
80
50
-65 to +200
3.5
ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS
MIN
ICEV
VCE=Rated VCEO, VEB=1.5V
ICEV
VCE=Rated VCEO, VEB=1.5V, TC=150°C
ICEO
VCE=½Rated VCEO
IEBO
VEB=5.0V
BVCEO
IC=50mA, (2N6294, 2N6296)
60
BVCEO
IC=50mA, (2N6295, 2N6297)
80
VCE(SAT) IC=2.0A, IB=8.0mA
VCE(SAT) IC=4.0A, IB=40mA
VBE(SAT) IC=4.0A, IB=40mA
VBE(ON)
VCE=3.0V, IC=2.0A
hFE VCE=3.0V, IC=2.0A
750
hFE VCE=3.0V, IC=4.0A
100
hfe VCE=3.0V, IC=1.5A, f=1.0kHz
300
fT VCE=3.0V, IC=1.5A, f=1.0MHz
4.0
Cob VCB=10V, IE=0, f=100kHz (NPN types)
Cob VCB=10V, IE=0, f=100kHz (PNP types)
MAX
0.5
5.0
0.5
2.0
2.0
3.0
4.0
2.8
18K
120
200
UNITS
V
V
V
A
A
mA
W
°C
°C/W
UNITS
mA
mA
mA
mA
V
V
V
V
V
V
MHz
pF
pF
R2 (2-September 2014)

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