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2N2324 fiches techniques PDF

Comset Semiconductors - (2N2322 - 2N2326) SILICON THYRISTORS

Numéro de référence 2N2324
Description (2N2322 - 2N2326) SILICON THYRISTORS
Fabricant Comset Semiconductors 
Logo Comset Semiconductors 





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2N2324 fiche technique
2n2322 to 2n2326
SILICON THYRISTORS
All-diffused PNPN thyristors designed for grating operation in mA/µA signal
or detection circuits
Compliance to RoHS.
MAXIMUM RATINGS (*)
TJ=125°C unless otherwise noted, RGK=1000
Symbol
Ratings
2N2322 2N2323 2N2324 2N2325 2N2326 Unit
VRRM(REP)
VRSM(NON-
REP)
IT(RMS)
ITSM
PGM
PG(AV)
IGM
VGFM
VGRM
TJ
TSTG
Peak reverse blocking voltage
(*)
Non-repetitive peak blocking
reverse voltage (t<5.0 ms)
Forward Current RMS (all
conduction angles)
Peak Surge Current
(One-Half Cycle, 60Hz)
No Repetition Until Thermal
Equilibrium is Restored.
Peak Gate Power – Forward
Average Gate Power -
Forward
Peak Gate Current – Forward
Peak Gate Voltage - Forward
Peak Gate Voltage - Reverse
Operating Junction
Temperature Range
Storage Temperature Range
25 50
40
http://www.DataSheet4U.net/
75
100 150
150 225
1.6
15
0.1
0.01
0.1
6.0
6.0
-65 to +125
-65 to +150
200 V
300 V
A
A
W
W
A
V
V
°C
12/11/2012
COMSET SEMICONDUCTORS
1|3
datasheet pdf - http://www.DataSheet4U.net/

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