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PDF IRF640 Data sheet ( Hoja de datos )
| Número de pieza | IRF640 | |
| Descripción | N-Channel Enhancement Mode Power MOS Transistors | |
| Fabricantes | Comset Semiconductors | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de IRF640 (archivo pdf) en la parte inferior de esta página. Total 3 Páginas | ||
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SEMICONDUCTORS
IRF640
N CHANNEL ENHANCEMENT MODE
POWER MOS TRANSISTORS
FEATURE
N channel in a plastic TO220 package.
They are intended for use in high speed power switching, low
voltage, relay drivers and general purpose switching
applications.
DC-DC & DC-AC converters for telecom, industrial and lighting
equipment.
Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS
Symbol
Ratings
http://www.DataSheet4U.net/
VDS
IDS
IDM
IAR
EAS
EAR
VGS
RDS(on)
PT
tJ
tstg
Drain-Source Voltage
Continuous Drain Current TC= 37°C
Pulsed Drain Current TC= 25°C
Avalanche Current, Limited by Tjmax
Avalanche Energy, Single pulse
ID = 18 A, VDD = 50 V, Tj = 25°C
Avalanche Energy, Periodic Limited by Tjmax
Gate-Source Voltage
Drain-Source on Resistance
Power Dissipation at Case Temperature TC= 25°C
Operating Temperature
Storage Temperature range
THERMAL CHARACTERISTICS
Symbol
RthJC
RthJA
Ratings
Thermal Resistance, junction-case
Thermal Resistance, junction-ambient
Value
200
18
72
18
280
13
20
0.18
125
150
-55 to +150
Unit
V
A
mJ
V
Ω
W
°C
Value
1
62.5
Unit
°C/W
09/11/2012
COMSET SEMICONDUCTORS
1/3
datasheet pdf - http://www.DataSheet4U.net/
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet IRF640.PDF ] | |
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