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Numéro de référence | BDY57 | ||
Description | (BDY57 / BDY58) NPN SILICON TRANSISTORS | ||
Fabricant | Comset Semiconductors | ||
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1 Page
NPN BDY57 – BDY58
SILICON TRANSISTORS, DIFFUSED MESA
The BDY57 and BDY58 are mounted in TO-3 metal package.
LF Large Signal Power Amplification
High Current Fast Switching.
Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS
Symbol
Ratings
VCEO
VCBO
VEBO
IC
IB
PTOT
TJ TS
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
www.DataSheet.net/
Collector Current
Base Current
Power Dissipation
@ TC = 25°
Junction Temperature Storage Temperature
Value
BDY57
BDY58
BDY57
BDY58
80
125
120
160
10
25
6
175
-65 to +200
THERMAL CHARACTERISTICS
Symbol
Ratings
RthJ-C
Thermal Resistance, Junction to Case
Value
1
Unit
V
V
V
A
A
W
°C
Unit
°C/W
09/11/2012
COMSET SEMICONDUCTORS
1|3
Datasheet pdf - http://www.DataSheet4U.co.kr/
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Pages | Pages 3 | ||
Télécharger | [ BDY57 ] |
No | Description détaillée | Fabricant |
BDY53 | NPN SILICON TRANSISTORS DIFFUSED MESA | ETC |
BDY53 | Silicon NPN Power Transistor | Inchange Semiconductor |
BDY53 | (BDY53 / BDY54) NPN SILICON TRANSISTORS | Comset Semiconductors |
BDY53 | Trans GP BJT NPN 120V 12A 3-Pin(2+Tab) TO-3 | New Jersey Semiconductor |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
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