|
|
Numéro de référence | BDY54 | ||
Description | (BDY53 / BDY54) NPN SILICON TRANSISTORS | ||
Fabricant | Comset Semiconductors | ||
Logo | |||
1 Page
NPN BDY53 – BDY54
SILICON TRANSISTORS, DIFFUSED MESA
They are mounted in TO-3 metal package.
LF Large Signal Power Amplification
High Current Fast Switching
Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS
Symbol
Ratings
VCEO
VCBO
VEBO
IC
IB
PTOT
TJ
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Base Current
www.DataSheet.net/
Power Dissipation
Junction Temperature
@ TC = 25°
TS Storage Temperature
BDY53
BDY54
BDY53
BDY54
Value
60
120
100
180
7
12
5
60
Unit
V
V
V
A
A
W
-65 to +200
°C
08/11/2012
COMSET SEMICONDUCTORS
1|3
Datasheet pdf - http://www.DataSheet4U.co.kr/
|
|||
Pages | Pages 3 | ||
Télécharger | [ BDY54 ] |
No | Description détaillée | Fabricant |
BDY53 | NPN SILICON TRANSISTORS DIFFUSED MESA | ETC |
BDY53 | Silicon NPN Power Transistor | Inchange Semiconductor |
BDY53 | (BDY53 / BDY54) NPN SILICON TRANSISTORS | Comset Semiconductors |
BDY53 | Trans GP BJT NPN 120V 12A 3-Pin(2+Tab) TO-3 | New Jersey Semiconductor |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
www.DataSheetWiki.com | 2020 | Contactez-nous | Recherche |