(PDF) BDX62C Datasheet - Silicon PNP Darlington Power Transistor

Número de pieza	BDX62C
Descripción	Silicon PNP Darlington Power Transistor
Fabricantes	Inchange Semiconductor
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No Preview Available ! INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor isc Product Specification BDX62/A/B/C DESCRIPTION ·Collector Current -IC= -8A ·High DC Current Gain-hFE= 1000(Min)@ IC= -3A ·Complement to Type BDX63/A/B/C APPLICATIONS ·Designed for audio output stages and general amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT BDX62 -80 VCBO Collector-Base Voltage BDX62A BDX62B -100 -120 V BDX62C -140 BDX62 -60 VCEO Collector-Emitter Voltage BDX62A BDX62B -80 -100 V www.DataSheet.net/ BDX62C -120 VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -8 A ICM Collector Current-Peak -12 A IBB Base Current-Continuous Collector Power Dissipation PC @ TC=25℃ TJ Junction Temperature Tstg Storage Temperature Range -0.15 90 200 -65~200 A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX UNIT 1.94 ℃/W isc Website：www.iscsemi.cn Datasheet pdf - http://www.DataSheet4U.co.kr/ 1 page

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PDF BDX62C Data sheet ( Hoja de datos )