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BDX62B fiches techniques PDF

Inchange Semiconductor - Silicon PNP Darlington Power Transistor

Numéro de référence BDX62B
Description Silicon PNP Darlington Power Transistor
Fabricant Inchange Semiconductor 
Logo Inchange Semiconductor 





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BDX62B fiche technique
INCHANGE Semiconductor
isc Silicon PNP Darlington Power Transistor
isc Product Specification
BDX62/A/B/C
DESCRIPTION
·Collector Current -IC= -8A
·High DC Current Gain-hFE= 1000(Min)@ IC= -3A
·Complement to Type BDX63/A/B/C
APPLICATIONS
·Designed for audio output stages and general amplifier
and switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
BDX62
-80
VCBO
Collector-Base
Voltage
BDX62A
BDX62B
-100
-120
V
BDX62C
-140
BDX62
-60
VCEO
Collector-Emitter
Voltage
BDX62A
BDX62B
-80
-100
V
www.DataSheet.net/
BDX62C
-120
VEBO
Emitter-Base Voltage
-5 V
IC Collector Current-Continuous
-8 A
ICM Collector Current-Peak
-12 A
IBB Base Current-Continuous
Collector Power Dissipation
PC @ TC=25
TJ Junction Temperature
Tstg Storage Temperature Range
-0.15
90
200
-65~200
A
W
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance, Junction to Case
MAX UNIT
1.94 /W
isc Websitewww.iscsemi.cn
Datasheet pdf - http://www.DataSheet4U.co.kr/

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