2N6282 Datasheet PDF - ON Semiconductor
| Part Number | 2N6282 | |
| Description | DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS | |
| Manufacturers | ON Semiconductor | |
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Darlington Complementary
Silicon Power Transistors
. . . designed for general–purpose amplifier and low–frequency switching applica-
tions.
• High DC Current Gain @ IC = 10 Adc —
hFE = 2400 (Typ) — 2N6282, 2N6283, 2N6284
hFE = 4000 (Typ) — 2N6285, 2N6286, 2N6287
• Collector–Emitter Sustaining Voltage —
VCEO(sus) = 60 Vdc (Min) — 2N6282, 2N6285
VCEO(sus) = 80 Vdc (Min) — 2N6283, 2N6286
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎVCEO(sus) = 100 Vdc (Min) — 2N6284, 2N6287
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎΕ Monolithic Construction with Built–In Base–Emitter Shunt Resistors
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ*MAXIMUM RATINGS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎRating
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector–Emitter Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector–Base Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎEmitter–Base Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector Current — Continuous
Peak
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎBase Current
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTotal Device Dissipation @ TC = 25_C
Derate above 25_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎOperating and Storage Junction
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTemperature Range
Symbol
VCEO
VCB
VEB
IC
IB
PD
TJ,Tstg
2N6282 2N6283 2N6284
2N6285 2N6286 2N6287
60 80 100
60 80 100
5.0
20
40
0.5
160
0.915
– 65 to + 200
Unit
Vdc
Vdc
Vdc
Adc
Adc
Watts
W/_C
_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ*THERMAL CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCharacteristic
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎThermalResistance, Junction to Case
Symbol
RθJC
Max Unit
1.09 _C/W
* Indicates JEDEC Registered Data.
160
140
120
100
80
60
40
20
0
0 25 50 75 100 125 150 175 200
TC, CASE TEMPERATURE (°C)
Figure 1. Power Derating
Preferred devices are Motorola recommended choices for future use and best overall value.
©MMoototorroollaa, IBncip. 1o9la95r Power Transistor Device Data
Order this document
by 2N6282/D
2NN6PN282
thru
2N6284*
PNP
2N6285
thru
2N6287*
*Motorola Preferred Device
DARLINGTON
20 AMPERE
COMPLEMENTARY
SILICON
POWER TRANSISTORS
60, 80, 100 VOLTS
160 WATTS
CASE 1–07
TO–204AA
(TO–3)
1
|
| |
 
NPN
2N6282, 2N6283, 2N6284
2N6282 thru 2N6284 2N6285 thru 2N6287
PNP
2N6285, 2N6286, 2N6287
+ 5.0
++ 4.0
+ 3.0
*APPLIES FOR IC/IB ≤
hFE @ VCE
250
3.0 V
+ 5.0
++ 4.0
+ 3.0
*APPLIES FOR IC/IB ≤
hFE @ VCE
250
3.0 V
+ 2.0 25°C to 150°C
+ 1.0
0 – 55°C to + 25°C
+ 2.0 25°C to 150°C
+ 1.0 – 55°C to + 25°C
0
– 1.0 *θVC for VCE(sat)
– 2.0
– 3.0 θVB for VBE
25°C to + 150°C
– 4.0
– 5.0
0.2 0.3 0.5 0.7 1.0
2.0 3.0
– 55°C to + 25°C
5.0 7.0 10
20
– 1.0 *θVC for VCE(sat)
– 2.0
25°C to + 150°C
– 3.0 θVB for VBE
– 4.0
– 5.0
0.2 0.3 0.5 0.7 1.0
2.0 3.0
– 55°C to + 25°C
5.0 7.0 10
20
IC, COLLECTOR CURRENT (AMP)
IC, COLLECTOR CURRENT (AMP)
Figure 13. Temperature Coefficients
105 103
104 VCE = 30 V
103
TJ = 150°C
102
100°C
VCE = 30 V
102
TJ = 150°C
101
100 100°C
101
REVERSE
FORWARD
10–1
REVERSE
FORWARD
100
25°C
10–1
– 0.6 – 0.4 – 0.2 0 + 0.2 + 0.4 + 0.6 + 0.8 + 1.0 + 1.2 + 1.4
10–2 25°C
10–3
+ 0.6 + 0.4 + 0.2 0 – 0.2 – 0.4 – 0.6 – 0.8 – 1.0 – 1.2 – 1.4
VBE, BASE–EMITTER VOLTAGE (VOLTS)
VBE, BASE–EMITTER VOLTAGE (VOLTS)
Figure 14. Collector Cut–Off Region
NPN
2N6282
2N6283
2N6284
BASE
COLLECTOR
[ [8.0 k 60
PNP
2N6285
2N6286
2N6287
BASE
COLLECTOR
[ [8.0 k 60
EMITTER
Figure 15. Darlington Schematic
EMITTER
Motorola Bipolar Power Transistor Device Data
5
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Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for 2N6282 electronic component. |
| Information | Total 6 Pages | |
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| Download | [ 2N6282.PDF Datasheet ] | |
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