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BDV66C fiches techniques PDF

Inchange Semiconductor - Silicon PNP Darlington Power Transistor

Numéro de référence BDV66C
Description Silicon PNP Darlington Power Transistor
Fabricant Inchange Semiconductor 
Logo Inchange Semiconductor 





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BDV66C fiche technique
INCHANGE Semiconductor
isc Silicon PNP Darlington Power Transistor
isc Product Specification
BDV66/A/B/C
DESCRIPTION
·Collector Current -IC= -16A
·Collector-Emitter Saturation Voltage-
: VCE(sat)= -2.0V(Max.)@ IC= -10A
·Complement to Type BDV67/A/B/C
APPLICATIONS
·Designed for audio output stages and general amplifier
and switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
BDV66
-80
VCBO
Collector-Base
Voltage
BDV66A
BDV66B
-100
-120
V
BDV66C
-140
BDV66
-60
VCEO
Collector-Emitter
Voltage
BDV66A
BDV66B
-80
-100
www.DataSheet.net/
V
BDV66C
-120
VEBO
Emitter-Base Voltage
-5 V
IC Collector Current-Continuous
-16 A
ICM Collector Current-Peak
-20 A
IBB Base Current-Continuous
Collector Power Dissipation
PC @ TC=25
TJ Junction Temperature
Tstg Storage Temperature Range
-0.5
175
150
-65~150
A
W
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance, Junction to Case
MAX UNIT
0.625 /W
isc Websitewww.iscsemi.cn
Datasheet pdf - http://www.DataSheet4U.co.kr/

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