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Numéro de référence | IRFS740A | ||
Description | Advanced Power MOSFET | ||
Fabricant | Fairchild Semiconductor | ||
Logo | |||
1 Page
Advanced Power MOSFET
FEATURES
Avalanche Rugged Technology
Rugged Gate Oxide Technology
Lower Input Capacitance
Improved Gate Charge
Extended Safe Operating Area
Lower Leakage Current : 10 µA (Max.) @ VDS = 400V
Lower RDS(ON) : 0.437 Ω (Typ.)
Absolute Maximum Ratings
Symbol
VDSS
ID
IDM
VGS
EAS
IAR
EAR
dv/dt
PD
TJ , TSTG
TL
Characteristic
Drain-to-Source Voltage
Continuous Drain Current (TC=25 oC )
Continuous Drain Current (TC=100oC )
Drain Current-Pulsed
O1
Gate-to-Source Voltage
Single Pulsed Avalanche Energy www.DataSheet.net/
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Total Power Dissipation (TC=25oC )
Linear Derating Factor
O2
O1
O1
O3
Operating Junction and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8”from case for 5-seconds
IRFS740A
BVDSS = 400 V
RDS(on) = 0.55 Ω
ID = 5.7 A
TO-220F
1
2
3
1.Gate 2. Drain 3. Source
Value
400
5.7
3.6
40
+_ 30
557
5.7
4.4
4.0
44
0.35
- 55 to +150
300
Units
V
A
A
V
mJ
A
mJ
V/ns
W
W/ oC
oC
Thermal Resistance
Symbol
R θJC
R θJA
Characteristic
Junction-to-Case
Junction-to-Ambient
Typ.
--
--
Max.
2.86
62.5
Units
oC/ W
©1999 Fairchild Semiconductor Corporation
Rev. B
Datasheet pdf - http://www.DataSheet4U.co.kr/
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Pages | Pages 7 | ||
Télécharger | [ IRFS740A ] |
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