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PDF 2N6261 Data sheet ( Hoja de datos )
| Número de pieza | 2N6261 | |
| Descripción | HOMETAXIAL-BASE MEDIUM POWER SILICON NPN TRANSISTOR | |
| Fabricantes | Seme LAB | |
| Logotipo |  |
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2N6261
MECHANICAL DATA
Dimensions in mm(inches)
3.68
(0.145) rad.
max.
3.61 (0.142)
3.86 (0.145)
rad.
6.35 (0.250)
8.64 (0.340)
4.83 (0.190)
5.33 (0.210)
9.14 (0.360)
min.
1.27 (0.050)
1.91 (0.750)
PIN 1 — Base
TO–66
PIN 2 — Emitter
Case is Collector.
HOMETAXIAL-BASE
MEDIUM POWER SILICON
NPN TRANSISTOR
FEATURES
• fT = 800 kHz at 0.2A
• Maximum Safe-area of operation curves
for dc and pulse operation.
• VCEV(sus) = 90V min
• Low Saturation Voltage:
VCE(sat = 1.0V at IC = 0.5A)
APPLICATIONS
• Power Switching Circuits
• Series and shunt-regulator driver and
output stages
• High-fidelity amplifers
• Solenoid Drivers
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
VCBO
VCEO
VCER(sus)
VCEV(sus)
VEBO
IC
Collector – Base Voltage
Collector – Emitter Voltage (with base open)
External Base – Emitter (RBE) = 100W)
Collector – Emitter Voltage (with base reverse biased)
Emitter to Base Voltage
Continuous Collector Current
IB Continuous Base Current
PD Total Power Dissipation at Tcase = 25°C
Derate above 25°C
Tj,Tstg,
Operating and Storage Junction Temperature Range
In accordance with JEDEC registration data format
90V
80V
85V
90V
7V
4A
2A
50W
0.200°C
–65 to 200°C
THERMAL CHARACTERISTICS
RqJC
Thermal Resistance, Junction to Case
3.5 °C/W
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
7/00
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet 2N6261.PDF ] | |
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