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Numéro de référence | 65N06 | ||
Description | 60V N-CHANNEL MOSFET | ||
Fabricant | KIA | ||
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1 Page
KIA
SEMICONDUCTORS
60V
N-CHANNEL MOSFET
65N06
1.Description
These N-Channel enhancement mode power field effect transistors are produced using
KIA’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored
to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse
in the avalanche and commutation mode. These devices are well suited for low voltage applications such
as automotive, DC/DC converters, and high efficiency switching for power management in portable and
battery operated products.
2. Features
65A, 60V, RDS(on)= 0.016Ω @VGS= 10 V
Low gate charge ( typical 48nC)
Low Crss ( typical 32.5pF)
Fast switching
100% avalanche tested
Improved dv/dt capability
175º maximum junction temperature rating
www.DataSheet.net/
3. Pin configuration
Pin
1
2
3
4
1 of 7
Function
Gate
Drain
Source
Drain
Datasheet pdf - http://www.DataSheet4U.co.kr/
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Pages | Pages 7 | ||
Télécharger | [ 65N06 ] |
No | Description détaillée | Fabricant |
65N02R | NTB65N02R | ON Semiconductor |
65N06 | 60V N-CHANNEL MOSFET | KIA |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
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