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KIA - 60V N-CHANNEL MOSFET

Numéro de référence 65N06
Description 60V N-CHANNEL MOSFET
Fabricant KIA 
Logo KIA 





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65N06 fiche technique
KIA
SEMICONDUCTORS
60V
N-CHANNEL MOSFET
65N06
1.Description
These N-Channel enhancement mode power field effect transistors are produced using
KIA’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored
to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse
in the avalanche and commutation mode. These devices are well suited for low voltage applications such
as automotive, DC/DC converters, and high efficiency switching for power management in portable and
battery operated products.
2. Features
„ 65A, 60V, RDS(on)= 0.016@VGS= 10 V
„ Low gate charge ( typical 48nC)
„ Low Crss ( typical 32.5pF)
„ Fast switching
„ 100% avalanche tested
„ Improved dv/dt capability
„ 175º maximum junction temperature rating
www.DataSheet.net/
3. Pin configuration
Pin
1
2
3
4
1 of 7
Function
Gate
Drain
Source
Drain
Datasheet pdf - http://www.DataSheet4U.co.kr/

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