(PDF) BDT63C Datasheet - Silicon NPN Darlington Power Transistor

Número de pieza	BDT63C
Descripción	Silicon NPN Darlington Power Transistor
Fabricantes	Inchange Semiconductor
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No Preview Available ! INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor isc Product Specification BDT63/A/B/C DESCRIPTION ·Collector Current -IC= 10A ·High DC Current Gain-hFE= 1000(Min)@ IC= 3A ·Complement to Type BDT62/A/B/C APPLICATIONS ·Designed for audio output stages and general purpose amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT BDT63 60 VCER Collector-Emitter Voltage BDT63A BDT63B 80 100 V BDT63C 120 BDT63 60 VCEO Collector-Emitter Voltage BDT63A BDT63B 80 100 V www.DataSheet.net/ BDT63C 120 VEBO Emitter-Base Voltage 5V IC Collector Current-Continuous 10 A ICM Collector Current-Peak 15 A IBB Base Current-Continuous Collector Power Dissipation PC @ TC=25℃ TJ Junction Temperature Tstg Storage Temperature Range 0.25 90 150 -65~150 A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX UNIT 1.39 ℃/W isc Website：www.iscsemi.cn Datasheet pdf - http://www.DataSheet4U.co.kr/ 1 page

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PDF BDT63C Data sheet ( Hoja de datos )