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BDT63A fiches techniques PDF

Inchange Semiconductor - Silicon NPN Darlington Power Transistor

Numéro de référence BDT63A
Description Silicon NPN Darlington Power Transistor
Fabricant Inchange Semiconductor 
Logo Inchange Semiconductor 





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BDT63A fiche technique
INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
isc Product Specification
BDT63/A/B/C
DESCRIPTION
·Collector Current -IC= 10A
·High DC Current Gain-hFE= 1000(Min)@ IC= 3A
·Complement to Type BDT62/A/B/C
APPLICATIONS
·Designed for audio output stages and general purpose
amplifier applications
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
BDT63
60
VCER
Collector-Emitter
Voltage
BDT63A
BDT63B
80
100
V
BDT63C
120
BDT63
60
VCEO
Collector-Emitter
Voltage
BDT63A
BDT63B
80
100
V
www.DataSheet.net/
BDT63C
120
VEBO
Emitter-Base Voltage
5V
IC Collector Current-Continuous
10 A
ICM Collector Current-Peak
15 A
IBB Base Current-Continuous
Collector Power Dissipation
PC @ TC=25
TJ Junction Temperature
Tstg Storage Temperature Range
0.25
90
150
-65~150
A
W
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance, Junction to Case
MAX UNIT
1.39 /W
isc Websitewww.iscsemi.cn
Datasheet pdf - http://www.DataSheet4U.co.kr/

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