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Numéro de référence | BDT63A | ||
Description | Silicon NPN Darlington Power Transistor | ||
Fabricant | Inchange Semiconductor | ||
Logo | |||
1 Page
INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
isc Product Specification
BDT63/A/B/C
DESCRIPTION
·Collector Current -IC= 10A
·High DC Current Gain-hFE= 1000(Min)@ IC= 3A
·Complement to Type BDT62/A/B/C
APPLICATIONS
·Designed for audio output stages and general purpose
amplifier applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
BDT63
60
VCER
Collector-Emitter
Voltage
BDT63A
BDT63B
80
100
V
BDT63C
120
BDT63
60
VCEO
Collector-Emitter
Voltage
BDT63A
BDT63B
80
100
V
www.DataSheet.net/
BDT63C
120
VEBO
Emitter-Base Voltage
5V
IC Collector Current-Continuous
10 A
ICM Collector Current-Peak
15 A
IBB Base Current-Continuous
Collector Power Dissipation
PC @ TC=25℃
TJ Junction Temperature
Tstg Storage Temperature Range
0.25
90
150
-65~150
A
W
℃
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance, Junction to Case
MAX UNIT
1.39 ℃/W
isc Website:www.iscsemi.cn
Datasheet pdf - http://www.DataSheet4U.co.kr/
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Pages | Pages 2 | ||
Télécharger | [ BDT63A ] |
No | Description détaillée | Fabricant |
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