(PDF) BD245C Datasheet - NPN SILICON POWER TRANSISTORS

Número de pieza	BD245C
Descripción	NPN SILICON POWER TRANSISTORS
Fabricantes	Comset Semiconductors
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No Preview Available ! BD245 – A – B – C NPN SINGLE-DIFFUSED MESA SILICON POWER TRANSISTORS They are the power transistors for power amplifier and high-speed-switching applications. The complementary is BD246, A, B, C Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol Ratings VCEO Collector-Emitter Voltage (IC = -30mA) VCER VEBO IC IB PT TJ TS www.DataSheet.net/ Collector-Emitter Voltage (RBE = 100 Ω) Emitter-Base Voltage Collector Current Base Current Power Dissipation Junction Temperature Storage Temperature Tmb = 25° C THERMAL CHARACTERISTICS Symbol Ratings RthJC RthJA Junction to Case Thermal Resistance Junction to free air Thermal Resistance Value BD245 BD245A BD245B BD245C BD245 BD245A BD245B BD245C IC ICM 45 60 80 100 55 70 90 115 5.0 10 15 3 80 -65 to +150 -65 to +150 Unit V V V A A Watts °C Value 1.56 42 Unit °C / W °C / W 22/10/2012 COMSET SEMICONDUCTORS 1/3 Datasheet pdf - http://www.DataSheet4U.co.kr/ 1 page

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PDF BD245C Data sheet ( Hoja de datos )