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BD138 fiches techniques PDF

Comset Semiconductors - (BD136 - BD140) SILICON PLANAR EPITAXIAL POWER TRANSISTORS

Numéro de référence BD138
Description (BD136 - BD140) SILICON PLANAR EPITAXIAL POWER TRANSISTORS
Fabricant Comset Semiconductors 
Logo Comset Semiconductors 





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BD138 fiche technique
NPN BD136 – BD138 – BD140
SILICON PLANAR EPITAXIAL POWER TRANSISTORS.
The BD136-BD138-BD140 are PNP Transistors
They are recommended for driver stages in hi-fi amplifiers and television circuits.
They are mounted in Jedec TO-126 plastic package.
NPN complements are BD135-BD137-BD139.
Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS
Symbol
Ratings
-VCBO
Collector-Base Voltage (IE= 0)
-VCEO
Collector-Emitter Voltage (IB= 0)
-VCER
-VEBO
-IC
-IB
PT
TJ
TStg
www.DataSheet.net/
Collector-Emitter Voltage (RBE= 1 kΩ)
Emitter-Base Voltage (IE= 0)
Collector Current
Base current
Total power Dissipation
Junction Temperature
Storage Temperature
@ Tmb = 70°C
THERMAL CHARACTERISTICS
BD135
BD137
BD139
BD135
BD137
BD139
BD135
BD137
BD139
-IC
-ICM
Symbol
Ratings
RthJ-mb
RthJ-a
Thermal Resistance, Junction to mouting base
Thermal Resistance, Junction to ambient in free air
Value
45
60
100
45
60
80
45
60
100
5
1.5
2
0.5
8
150
-65 to +150
Unit
V
V
V
V
A
A
Watts
°C
°C
Value
10
100
Unit
K/W
K/W
15/10/2012
COMSET SEMICONDUCTORS
1|3
Datasheet pdf - http://www.DataSheet4U.co.kr/

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