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PDF BD135 Data sheet ( Hoja de datos )
| Número de pieza | BD135 | |
| Descripción | EPITAXIAL PLANAR NPN TRANSISTOR | |
| Fabricantes | KEC | |
| Logotipo |  |
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 1. NPN Power Transistor - Philips  Hay una vista previa y un enlace de descarga de BD135 (archivo pdf) en la parte inferior de esta página. Total 1 Páginas | ||
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SEMICONDUCTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION.
FEATURES
High Current. (Max. : 1.5A)
Low Voltage (Max. : 45V)
DC Current Gain : hFE=40Min. @IC=0.15A
Complementary to BD136.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Collector Power
Dissipation
Ta=25
Tc=25
Junction Temperature
Storage Temperature Range
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
RATING
45
45
5
1.5
0.5
1.25
10
150
-55 150
UNIT
V
V
V
A
A
W
www.DataSheet.net/
BD135
EPITAXIAL PLANAR NPN TRANSISTOR
A
B
C
H
J
K
D
E
F
G
L
M
N
O
P
12 3
1. EMITTER
2. COLLECTOR
3. BASE
DIM
A
B
C
D
E
F
G
H
J
K
L
M
N
O
P
MILLIMETERS
8.3 MAX
5.8
0.7
Φ3.2+_ 0.1
3.5
11.0 +_ 0.3
2.9 MAX
1.0 MAX
1.9 MAX
0.75 +_ 0.15
15.5+_ 0.5
2.3+_ 0.1
0.65 +_ 0.15
1.6
3.4 MAX
TO-126
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
Collector Cut-off Current
Emitter Cut-off Current
Collector-Emitter Breakdown Voltage
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Voltage
Transition Frequency
ICBO
IEBO
V(BR)CEO
hFE (1)
hFE (2)
hFE (3)
VCE(sat)
VBE
fT
TEST CONDITION
VCB=30V, IE=0
VEB=5V, IC=0
IC=30mA, IB=0
IC=5mA, VCE=2V
IC=150mA, VCE=2V
IC=500mA, VCE=2V
IC=500mA, IB=50mA
VCE=2V, IC=500mA
VCE=5V, IC=50mA
MIN.
-
-
45
25
40
25
-
-
-
TYP.
-
-
-
-
-
-
-
-
190
MAX.
0.1
10
-
-
250
-
0.5
1.0
-
UNIT
A
A
V
V
V
MHz
2003. 6. 16
Revision No : 0
1/1
Datasheet pdf - http://www.DataSheet4U.co.kr/
1 page | ||
| Páginas | Total 1 Páginas | |
| PDF Descargar | [ Datasheet BD135.PDF ] | |
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